BUK7Y59-60E PDF and Equivalents Search

 

BUK7Y59-60E Specs and Replacement

Type Designator: BUK7Y59-60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.5 nS

Cossⓘ - Output Capacitance: 69 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm

Package: LFPAK56 POWER-SO8

BUK7Y59-60E substitution

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BUK7Y59-60E datasheet

 ..1. Size:313K  nxp
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BUK7Y59-60E

BUK7Y59-60E N-channel 60 V, 59 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti... See More ⇒

 8.1. Size:1009K  nxp
buk7y53-100b.pdf pdf_icon

BUK7Y59-60E

BUK7Y53-100B N-channel TrenchMOS standard level FET Rev. 3 13 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for us... See More ⇒

 9.1. Size:190K  philips
buk7y13-40b.pdf pdf_icon

BUK7Y59-60E

BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in au... See More ⇒

 9.2. Size:806K  nxp
buk7y25-40b.pdf pdf_icon

BUK7Y59-60E

BUK7Y25-40B N-channel TrenchMOS standard level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use ... See More ⇒

Detailed specifications: BUK7Y25-80E, BUK7Y29-40E, BUK7Y38-100E, BUK7Y3R5-40E, BUK7Y41-80E, BUK7Y43-60E, BUK7Y4R4-40E, BUK7Y4R8-60E, IRF520, BUK7Y65-100E, BUK7Y6R0-60E, BUK7Y72-80E, BUK7Y7R2-60E, BUK7Y7R6-40E, BUK7Y7R8-80E, BUK7Y8R7-60E, BUK7Y98-80E

Keywords - BUK7Y59-60E MOSFET specs

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