BUK7Y7R2-60E Datasheet and Replacement
Type Designator: BUK7Y7R2-60E
Marking Code: *77E260
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 50.8 nC
trⓘ - Rise Time: 18.3 nS
Cossⓘ - Output Capacitance: 351 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: LFPAK56 POWER-SO8
BUK7Y7R2-60E Datasheet (PDF)
buk7y7r2-60e.pdf
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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: CI72N65 | NTMS4404NR2 | WMQ50N04T1 | KXU03N25 | SVF12N65CFQ | SDF9N100SXH | GSM4412W
Keywords - BUK7Y7R2-60E MOSFET datasheet
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History: CI72N65 | NTMS4404NR2 | WMQ50N04T1 | KXU03N25 | SVF12N65CFQ | SDF9N100SXH | GSM4412W
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