BUK7Y9R9-80E PDF and Equivalents Search

 

BUK7Y9R9-80E Specs and Replacement


   Type Designator: BUK7Y9R9-80E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 195 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 89 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 303 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0249 Ohm
   Package: LFPAK56 POWER-SO8
 

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BUK7Y9R9-80E datasheet

 ..1. Size:295K  nxp
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BUK7Y9R9-80E

BUK7Y9R9-80E N-channel 80 V, 9.9 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe... See More ⇒

 8.1. Size:459K  nxp
buk7y98-80e.pdf pdf_icon

BUK7Y9R9-80E

BUK7Y98-80E N-channel 80 V, 98 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti... See More ⇒

 9.1. Size:190K  philips
buk7y13-40b.pdf pdf_icon

BUK7Y9R9-80E

BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in au... See More ⇒

 9.2. Size:806K  nxp
buk7y25-40b.pdf pdf_icon

BUK7Y9R9-80E

BUK7Y25-40B N-channel TrenchMOS standard level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use ... See More ⇒

Detailed specifications: BUK7Y65-100E , BUK7Y6R0-60E , BUK7Y72-80E , BUK7Y7R2-60E , BUK7Y7R6-40E , BUK7Y7R8-80E , BUK7Y8R7-60E , BUK7Y98-80E , IRFB31N20D , BUK9506-55A , BUK9508-55A , BUK9509-55A , BUK9515-60E , BUK9516 , BUK951R6-30E , BUK9528-55A , BUK952R3-40E .

Keywords - BUK7Y9R9-80E MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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