All MOSFET. BUK952R8-60E Datasheet

 

BUK952R8-60E Datasheet and Replacement


   Type Designator: BUK952R8-60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 349 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 119 nS
   Cossⓘ - Output Capacitance: 1051 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: TO-220AB
 

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BUK952R8-60E Datasheet (PDF)

 ..1. Size:213K  nxp
buk952r8-60e.pdf pdf_icon

BUK952R8-60E

BUK952R8-60EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive

 5.1. Size:340K  philips
buk952r8-30b buk962r8-30b.pdf pdf_icon

BUK952R8-60E

BUK95/962R8-30BTrenchMOS logic level FETRev. 02 14 October 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK952R8-30B in SOT78 (TO-220AB)BUK962R8-30B in SOT404 (D2-PAK).1.2 Features Very low on-state

 7.1. Size:213K  nxp
buk952r3-40e.pdf pdf_icon

BUK952R8-60E

BUK952R3-40EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive

 8.1. Size:52K  philips
buk9520-55.pdf pdf_icon

BUK952R8-60E

Philips Semiconductors Product specification TrenchMOS transistor BUK9520-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 52 Alow on-state resist

Datasheet: BUK9506-55A , BUK9508-55A , BUK9509-55A , BUK9515-60E , BUK9516 , BUK951R6-30E , BUK9528-55A , BUK952R3-40E , 8N60 , BUK953R2-40E , BUK953R5-60E , BUK9540-100A , BUK954R4-80E , BUK954R8-60E , BUK956R1-100E , BUK958R5-40E , BUK9611-80E .

History: AUIRLS3036 | 8N60KG-TA3-T | STP5N90

Keywords - BUK952R8-60E MOSFET datasheet

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