All MOSFET. BUK956R1-100E Datasheet

 

BUK956R1-100E MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK956R1-100E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 349 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.1 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 133 nC

Rise Time (tr): 168 nS

Drain-Source Capacitance (Cd): 725 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0059 Ohm

Package: TO-220AB

BUK956R1-100E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK956R1-100E Datasheet (PDF)

1.1. buk956r1-100e.pdf Size:211K _update_mosfet

BUK956R1-100E
BUK956R1-100E

BUK956R1-100E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitiv

5.1. buk951r6-30e.pdf Size:218K _update_mosfet

BUK956R1-100E
BUK956R1-100E

BUK951R6-30E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive

5.2. buk958r5-40e.pdf Size:213K _update_mosfet

BUK956R1-100E
BUK956R1-100E

BUK958R5-40E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive

 5.3. buk954r4-80e.pdf Size:215K _update_mosfet

BUK956R1-100E
BUK956R1-100E

BUK954R4-80E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive

5.4. buk952r8-60e.pdf Size:213K _update_mosfet

BUK956R1-100E
BUK956R1-100E

BUK952R8-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive

 5.5. buk953r5-60e.pdf Size:214K _update_mosfet

BUK956R1-100E
BUK956R1-100E

BUK953R5-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive

5.6. buk9528-55a.pdf Size:317K _update_mosfet

BUK956R1-100E
BUK956R1-100E

BUK9528-55A; BUK9628-55A TrenchMOS™ logic level FET Rev. 01 — 18 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9528-55A in SOT78 (TO-220AB) BUK9628-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ techno

5.7. buk952r3-40e.pdf Size:213K _update_mosfet

BUK956R1-100E
BUK956R1-100E

BUK952R3-40E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive

5.8. buk9506-55a.pdf Size:332K _update_mosfet

BUK956R1-100E
BUK956R1-100E

BUK9506-55A; BUK9606-55A; BUK9E06-55A TrenchMOS™ logic level FET Rev. 03 — 23 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK); BUK9E06-55A in SOT226 (I2-PAK).

5.9. buk9515-60e.pdf Size:212K _update_mosfet

BUK956R1-100E
BUK956R1-100E

BUK9515-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive

5.10. buk9540-100a.pdf Size:314K _update_mosfet

BUK956R1-100E
BUK956R1-100E

BUK95/9640-100A TrenchMOS™ logic level FET Rev. 03 — 08 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9540-100A in SOT78 (TO-220AB) BUK9640-100A in SOT404 (D2-PAK). 2. Features TrenchMOS™ technology Q101 comp

5.11. buk953r2-40e.pdf Size:217K _update_mosfet

BUK956R1-100E
BUK956R1-100E

BUK953R2-40E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive

5.12. buk954r8-60e.pdf Size:213K _update_mosfet

BUK956R1-100E
BUK956R1-100E

BUK954R8-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive

5.13. buk9516.pdf Size:102K _update_mosfet

BUK956R1-100E
BUK956R1-100E

 Philips Semiconductors Product specification TrenchMOS transistor BUK9516-55A Logic level FET BUK9616-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 66 A ’trench’ technolo

5.14. buk9509-55a.pdf Size:313K _update_mosfet

BUK956R1-100E
BUK956R1-100E

BUK95/9609-55A TrenchMOS™ logic level FET Rev. 01 — 21 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9509-55A in SOT78 (TO-220AB) BUK9609-55A in SOT404 (D2-PAK). 2. Features TrenchMOS™ technology Q101 complia

5.15. buk9508-55a.pdf Size:328K _update_mosfet

BUK956R1-100E
BUK956R1-100E

BUK95/9608-55A TrenchMOS™ logic level FET Rev. 03 — 6 May 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9508-55A in SOT78 (TO-220AB) BUK9608-55A in SOT404 (D2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 1

5.16. buk9575 buk9675-100a.pdf Size:82K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9575-100A Logic level FET BUK9675-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 23 A trench technology whi

5.17. buk9515-100a buk9615-100a.pdf Size:70K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9515-100A Logic level FET BUK9615-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench technology whic

5.18. buk9520-100b.pdf Size:197K _philips

BUK956R1-100E
BUK956R1-100E

BUK9520-100B N-channel TrenchMOS logic level FET Rev. 01 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and b

5.19. buk9520-100a buk9620-100a.pdf Size:321K _philips

BUK956R1-100E
BUK956R1-100E

BUK9520-100A; BUK9620-100A TrenchMOS logic level FET Rev. 01 7 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9520-100A in SOT78 (TO-220AB) BUK9620-100A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology

5.20. buk9518-55.pdf Size:52K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9518-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 57 A low on-state resistance and

5.21. buk9535-55 2.pdf Size:53K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9535-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 34 A low on-state resistance and

5.22. buk95 buk96 buk9e06-55b.pdf Size:115K _philips

BUK956R1-100E
BUK956R1-100E

BUK95/96/9E06-55B N-channel TrenchMOS logic level FET Rev. 03 30 November 2004 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology, featuring very low on-state resistance. 1.2 Features TrenchMOS technology Q101 compliant 175

5.23. buk9508 buk9608-55a 2.pdf Size:78K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9508-55A Logic level FET BUK9608-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench technology which

5.24. buk9523-75a buk9623-75a.pdf Size:324K _philips

BUK956R1-100E
BUK956R1-100E

BUK9523-75A; BUK9623-75A TrenchMOS logic level FET Rev. 01 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9523-75A in SOT78 (TO-220AB) BUK9623-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q101

5.25. buk954r4-40b buk964r4-40b buk9e4r4-40b.pdf Size:318K _philips

BUK956R1-100E
BUK956R1-100E

BUK95/96/9E4R4-40B TrenchMOS logic level FET Rev. 02 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Applications Automo

5.26. buk9528-55 2.pdf Size:52K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9528-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 40 A low on-state resistance and

5.27. buk9509 buk9609 75a-02.pdf Size:326K _philips

BUK956R1-100E
BUK956R1-100E

BUK9509-75A; BUK9609-75A TrenchMOS logic level FET Rev. 02 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9509-75A in SOT78 (TO-220AB) BUK9609-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q10

5.28. buk9510-55a buk9610-55a.pdf Size:327K _philips

BUK956R1-100E
BUK956R1-100E

BUK9510-55A; BUK9610-55A TrenchMOS logic level FET Rev. 01 20 August 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS1 technology, featuring very low on-state resistance. Product availability: BUK9510-55A in SOT78 (TO-220AB) 2 BUK9610-55A in SOT404 (D -PAK). 2. Features TrenchMOS technology Q101 compli

5.29. buk9528 buk9628-100a.pdf Size:77K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9528-100A Logic level FET BUK9628-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 49 A trench technology whi

5.30. buk9506-75b buk9606-75b.pdf Size:333K _philips

BUK956R1-100E
BUK956R1-100E

BUK95/9606-75B TrenchMOS logic level FET Rev. 02 30 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability: BUK9506-75B in SOT78 (TO-220AB) BUK9606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistance

5.31. buk9505-30a 2.pdf Size:50K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9505-30A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 30 V technology which features very low ID Drain current (DC) 75 A on-state resistance. It is in

5.32. buk9520-55.pdf Size:52K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9520-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 52 A low on-state resistance and

5.33. buk9514-30 1.pdf Size:47K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9514-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 30 V technology. The device features very ID Drain current (DC) 69 A low on-state resistance and

5.34. buk9516-55a buk9616-55a.pdf Size:102K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9516-55A Logic level FET BUK9616-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 66 A trench technology which

5.35. buk9506 buk9606-55a 2.pdf Size:66K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9506-55A Logic level FET BUK9606-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench technology which

5.36. buk9529-100b buk9629-100b.pdf Size:297K _philips

BUK956R1-100E
BUK956R1-100E

BUK95/9629-100B TrenchMOS logic level FET Rev. 01 18 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability: BUK9529-100B in SOT78 (TO-220AB) BUK9629-100B in SOT404 (D2-PAK). 1.2 Features Very low on-state resis

5.37. buk9511-55a buk9611-55a.pdf Size:341K _philips

BUK956R1-100E
BUK956R1-100E

BUK9511-55A; BUK9611-55A TrenchMOS logic level FET Rev. 01 7 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9511-55A in SOT78 (TO-220AB) BUK9611-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q101

5.38. buk9528-55a buk9628-55a.pdf Size:317K _philips

BUK956R1-100E
BUK956R1-100E

BUK9528-55A; BUK9628-55A TrenchMOS logic level FET Rev. 01 18 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9528-55A in SOT78 (TO-220AB) BUK9628-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q101

5.39. buk9516-75b buk9616-75b.pdf Size:300K _philips

BUK956R1-100E
BUK956R1-100E

BUK95/9616-75B TrenchMOS logic level FET Rev. 01 23 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability: BUK9516-75B in SOT78 (TO-220AB) BUK9616-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistan

5.40. buk9509-55a buk9609-55a.pdf Size:313K _philips

BUK956R1-100E
BUK956R1-100E

BUK95/9609-55A TrenchMOS logic level FET Rev. 01 21 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9509-55A in SOT78 (TO-220AB) BUK9609-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C

5.41. buk9510-100b buk9610-100b.pdf Size:342K _philips

BUK956R1-100E
BUK956R1-100E

BUK95/9610-100B TrenchMOS logic level FET Rev. 02 8 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability: BUK9510-100B in SOT78 (TO-220AB) BUK9610-100B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistance

5.42. buk9508-55 2.pdf Size:52K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9508-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 75 A low on-state resistance and

5.43. buk9524-55 2.pdf Size:52K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9524-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 45 A low on-state resistance and

5.44. buk9535-100a buk9635-100a.pdf Size:337K _philips

BUK956R1-100E
BUK956R1-100E

BUK9535-100A; BUK9635-100A TrenchMOS logic level FET Rev. 01 22 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9535-100A in SOT78 (TO-220AB) BUK9635-100A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology

5.45. buk9518-30 1.pdf Size:47K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9518-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 30 V technology. The device features very ID Drain current (DC) 55 A low on-state resistance and

5.46. buk9507-30b buk9607-30b.pdf Size:300K _philips

BUK956R1-100E
BUK956R1-100E

BUK95/9607-30B TrenchMOS logic level FET Rev. 01 25 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability: BUK9507-30B in SOT78 (TO-220AB) BUK9607-30B in SOT404 (D2-PAK). 1.2 Features Low on-state resistance Q1

5.47. buk9505-30a.pdf Size:987K _philips

BUK956R1-100E
BUK956R1-100E

BUK9505-30A N-channel TrenchMOS logic level FET Rev. 3 20 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and

5.48. buk9510-30 1.pdf Size:49K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9510-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 30 V technology. The device features very ID Drain current (DC) 75 A low on-state resistance and

5.49. buk9575-55 2.pdf Size:53K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9575-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 19.7 A low on-state resistance an

5.50. buk9540 buk9640-100a 2.pdf Size:81K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9540-100A Logic level FET BUK9640-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 37 A trench technology whi

5.51. buk95150-55a buk96150-55a.pdf Size:71K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK95150-55A Logic level FET BUK96150-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 13 A trench technology whic

5.52. buk9508-55a buk9608-55a.pdf Size:328K _philips

BUK956R1-100E
BUK956R1-100E

BUK95/9608-55A TrenchMOS logic level FET Rev. 03 6 May 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9508-55A in SOT78 (TO-220AB) BUK9608-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated

5.53. buk9575-55a buk9675-55a.pdf Size:345K _philips

BUK956R1-100E
BUK956R1-100E

BUK9575-55A; BUK9675-55A TrenchMOS logic level FET Rev. 01 9 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9575-55A in SOT78 (TO-220AB) BUK9675-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q101

5.54. buk9514-55 2.pdf Size:53K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9514-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 68 A low on-state resistance and

5.55. buk9514-55a buk9614-55a.pdf Size:322K _philips

BUK956R1-100E
BUK956R1-100E

BUK9514-55A; BUK9614-55A TrenchMOS logic level FET Rev. 01 7 Feb 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9514-55A in SOT78 (TO-220AB) BUK9614-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q101 comp

5.56. buk9518-55a buk9618-55a.pdf Size:333K _philips

BUK956R1-100E
BUK956R1-100E

BUK9518-55A; BUK9618-55A TrenchMOS logic level FET Rev. 01 27 August 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9518-55A in SOT78 (TO-220AB) 2 BUK9618-55A in SOT404 (D -PAK). 2. Features TrenchMOS technology Q101 complia

5.57. buk9524-55a buk9624-55a.pdf Size:333K _philips

BUK956R1-100E
BUK956R1-100E

BUK9524-55A; BUK9624-55A TrenchMOS logic level FET Rev. 01 29 September 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9524-55A in SOT78 (TO-220AB) BUK9624-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q1

5.58. buk95180-100a buk96180-100a.pdf Size:68K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK95180-100A Logic level FET BUK96180-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 11 A trench technology w

5.59. buk953r2-40 buk963r2-40b buk9e3r2-40b.pdf Size:325K _philips

BUK956R1-100E
BUK956R1-100E

BUK95/96/9E3R2-40B TrenchMOS logic level FET Rev. 04 14 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Applications Automotive

5.60. buk9535-55a buk9635-55a.pdf Size:71K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9535-55A Logic level FET BUK9635-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 34 A trench technology which

5.61. buk9506-30 1.pdf Size:48K _philips

BUK956R1-100E
BUK956R1-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9506-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 30 V technology. The device features very ID Drain current (DC) 75 A low on-state resistance and

5.62. buk952r8-30b buk962r8-30b.pdf Size:340K _philips

BUK956R1-100E
BUK956R1-100E

BUK95/962R8-30B TrenchMOS logic level FET Rev. 02 14 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability: BUK952R8-30B in SOT78 (TO-220AB) BUK962R8-30B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistanc

5.63. buk9504-40a buk9604-40a buk9e04-40a.pdf Size:358K _philips

BUK956R1-100E
BUK956R1-100E

BUK95/96/9E04-40A TrenchMOS logic level FET Rev. 01 24 October 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK). 2. Features TrenchMOS

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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