BUK96150-55A Datasheet and Replacement

Philips Semiconductors Product specification TrenchMOS transistor BUK95150-55A Logic level FET BUK96150-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 13 Atrench techno

Philips Semiconductors Product specification TrenchMOS transistor BUK9515-100ALogic level FET BUK9615-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 75 Atrench techno

BUK9615-100EN-channel TrenchMOS logic level FET13 February 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche rated

BUK9615-100AN-channel TrenchMOS logic level FETRev. 3 19 April 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Feature