BUK96150-55A Specs and Replacement
Type Designator: BUK96150-55A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 285 nS
Cossⓘ - Output Capacitance: 54 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.137 Ohm
Package: D2PAK
BUK96150-55A substitution
- MOSFET ⓘ Cross-Reference Search
BUK96150-55A datasheet
buk95150-55a buk96150-55a buk96150-55a.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK95150-55A Logic level FET BUK96150-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 13 A trench techno... See More ⇒
buk9515-100a buk9615-100a.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9515-100A Logic level FET BUK9615-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench techno... See More ⇒
buk9615-100e.pdf
BUK9615-100E N-channel TrenchMOS logic level FET 13 February 2014 Product data sheet 1. General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche rated ... See More ⇒
buk9615-100a.pdf
BUK9615-100A N-channel TrenchMOS logic level FET Rev. 3 19 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Feature... See More ⇒
Detailed specifications: BUK953R5-60E, BUK9540-100A, BUK954R4-80E, BUK954R8-60E, BUK956R1-100E, BUK958R5-40E, BUK9611-80E, BUK9614-60E, AO4468, BUK9615-100E, BUK961R4-30E, BUK961R5-30E, BUK961R6-40E, BUK961R7-40E, BUK9620-100A, BUK962R1-40E, BUK962R5-60E
Keywords - BUK96150-55A MOSFET specs
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