BUK961R5-30E MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK961R5-30E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 324 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 93.4 nC
trⓘ - Rise Time: 101 nS
Cossⓘ - Output Capacitance: 1597 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm
Package: D2PAK
BUK961R5-30E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK961R5-30E Datasheet (PDF)
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Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: STB100NF03L-03T4
