All MOSFET. BUK964R8-60E Datasheet

 

BUK964R8-60E MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK964R8-60E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 234 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.1 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 65 nC

Rise Time (tr): 73 nS

Drain-Source Capacitance (Cd): 607 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0044 Ohm

Package: D2PAK

BUK964R8-60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK964R8-60E Datasheet (PDF)

1.1. buk964r8-60e.pdf Size:207K _update_mosfet

BUK964R8-60E
BUK964R8-60E

BUK964R8-60E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive ava

3.1. buk964r7-80e.pdf Size:253K _update_mosfet

BUK964R8-60E
BUK964R8-60E

BUK964R7-80E N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Sui

3.2. buk964r2-80e.pdf Size:263K _update_mosfet

BUK964R8-60E
BUK964R8-60E

BUK964R2-80E N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Sui

 3.3. buk964r1-40e.pdf Size:208K _update_mosfet

BUK964R8-60E
BUK964R8-60E

BUK964R1-40E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive ava

3.4. buk964r2-60e.pdf Size:207K _update_mosfet

BUK964R8-60E
BUK964R8-60E

BUK964R2-60E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive ava

 3.5. buk954r4-40b buk964r4-40b buk9e4r4-40b.pdf Size:318K _philips

BUK964R8-60E
BUK964R8-60E

BUK95/96/9E4R4-40B TrenchMOS logic level FET Rev. 02 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Applications Automo

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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