BUK9E3R2-40E
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9E3R2-40E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 234
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 69.5
nC
trⓘ - Rise Time: 73
nS
Cossⓘ -
Output Capacitance: 875
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028
Ohm
Package:
I2PAK
BUK9E3R2-40E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK9E3R2-40E
Datasheet (PDF)
..1. Size:214K nxp
buk9e3r2-40e.pdf 
BUK9E3R2-40EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitiv
3.1. Size:325K philips
buk953r2-40 buk963r2-40b buk9e3r2-40b.pdf
BUK95/96/9E3R2-40BTrenchMOS logic level FETRev. 04 14 November 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible.1.3 Applications A
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buk9e3r7-60e.pdf
BUK9E3R7-60EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitiv
9.1. Size:358K philips
buk9504-40a buk9604-40a buk9e04-40a.pdf
BUK95/96/9E04-40ATrenchMOS logic level FETRev. 01 24 October 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK);BUK9E04-40A in SOT226 (I2-PAK).2. Features Tr
9.2. Size:199K philips
buk9e06-55a.pdf
BUK9E06-55AN-channel TrenchMOS logic level FETRev. 04 31 May 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features
9.3. Size:318K philips
buk954r4-40b buk964r4-40b buk9e4r4-40b.pdf
BUK95/96/9E4R4-40BTrenchMOS logic level FETRev. 02 13 October 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible.1.3 Application
9.4. Size:339K philips
buk9e08-55b.pdf
BUK9E08-55BN-channel TrenchMOS logic level FETRev. 03 31 May 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features
9.5. Size:115K philips
buk95 buk96 buk9e06-55b.pdf
BUK95/96/9E06-55BN-channel TrenchMOS logic level FETRev. 03 30 November 2004 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology, featuring very lowon-state resistance.1.2 Features TrenchMOS technology Q101 compli
9.6. Size:210K nxp
buk9e8r5-40e.pdf
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buk9e15-60e.pdf
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9.8. Size:211K nxp
buk9e2r8-60e.pdf
BUK9E2R8-60EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitiv
9.9. Size:213K nxp
buk9e4r4-80e.pdf
BUK9E4R4-80EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitiv
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buk9e2r3-40e.pdf
BUK9E2R3-40EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitiv
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buk9e4r9-60e.pdf
BUK9E4R9-60EN-channel TrenchMOS logic level FET5 October 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive a
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buk9e1r6-30e.pdf
BUK9E1R6-30EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitiv
9.13. Size:968K nxp
buk9e08-55b.pdf
BUK9E08-55BN-channel TrenchMOS logic level FETRev. 03 31 May 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features
9.14. Size:209K nxp
buk9e6r1-100e.pdf
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BUK9E1R9-40EN-channel 40 V, 1.9 m logic level MOSFET in IPAK5 June 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in a I2PAK package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche
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