BUK9K35-60E PDF and Equivalents Search

 

BUK9K35-60E PDF Specs and Replacement


   Type Designator: BUK9K35-60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 11.3 nS
   Cossⓘ - Output Capacitance: 98 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: LFPAK56D
 

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BUK9K35-60E PDF Specs

 ..1. Size:244K  nxp
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BUK9K35-60E

BUK9K35-60E Dual N-channel 60 V, 35 m logic level MOSFET 12 November 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101... See More ⇒

 8.1. Size:336K  nxp
buk9k32-100e.pdf pdf_icon

BUK9K35-60E

BUK9K32-100E Dual N-channel 100 V, 33 m logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q1... See More ⇒

 8.2. Size:268K  nxp
buk9k30-80e.pdf pdf_icon

BUK9K35-60E

BUK9K30-80E Dual N-channel 80 V, 30 m logic level MOSFET 12 May 2018 Product data sheet 1. General description Dual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC-Q101 ... See More ⇒

 9.1. Size:294K  nxp
buk9k6r2-40e.pdf pdf_icon

BUK9K35-60E

BUK9K6R2-40E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated ... See More ⇒

Detailed specifications: BUK9E8R5-40E , BUK9K12-60E , BUK9K134-100E , BUK9K17-60E , BUK9K18-40E , BUK9K25-40E , BUK9K29-100E , BUK9K32-100E , K4145 , BUK9K45-100E , BUK9K52-60E , BUK9K6R2-40E , BUK9K6R8-40E , BUK9K89-100E , BUK9K8R7-40E , BUK9Y107-80E , BUK9Y113-100E .

Keywords - BUK9K35-60E MOSFET specs

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