BUK9K6R2-40E Specs and Replacement
Type Designator: BUK9K6R2-40E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.1 nS
Cossⓘ -
Output Capacitance: 345 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: LFPAK56D
BUK9K6R2-40E substitution
- MOSFET ⓘ Cross-Reference Search
BUK9K6R2-40E datasheet
..1. Size:294K nxp
buk9k6r2-40e.pdf 
BUK9K6R2-40E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated ... See More ⇒
7.1. Size:339K nxp
buk9k6r8-40e.pdf
BUK9K6R8-40E Dual N-channel 40 V, 7.2 m logic level MOSFET 5 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q1... See More ⇒
9.1. Size:336K nxp
buk9k32-100e.pdf
BUK9K32-100E Dual N-channel 100 V, 33 m logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q1... See More ⇒
9.2. Size:295K nxp
buk9k18-40e.pdf
BUK9K18-40E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated ... See More ⇒
9.3. Size:305K nxp
buk9k29-100e.pdf
BUK9K29-100E Dual N-channel TrenchMOS logic level FET 28 March 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated ... See More ⇒
9.4. Size:714K nxp
buk9k5r6-30e.pdf
BUK9K5R6-30E Dual N-channel 30 V, 5.8 m logic level MOSFET 2 September 2015 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q... See More ⇒
9.5. Size:299K nxp
buk9k45-100e.pdf
BUK9K45-100E Dual N-channel TrenchMOS logic level FET 26 March 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated ... See More ⇒
9.6. Size:336K nxp
buk9k8r7-40e.pdf
BUK9K8R7-40E Dual N-channel 40 V, 9.4 m logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q... See More ⇒
9.7. Size:279K nxp
buk9k12-60e.pdf
BUK9K12-60E Dual N-channel 60 V, 11.5 m logic level MOSFET 8 May 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101 com... See More ⇒
9.8. Size:724K nxp
buk9k5r1-30e.pdf
BUK9K5R1-30E Dual N-channel 30 V, 5.3 m logic level MOSFET 2 September 2015 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q... See More ⇒
9.9. Size:330K nxp
buk9k134-100e.pdf
BUK9K134-100E Dual N-channel 100 V, 159 m logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET ... See More ⇒
9.10. Size:268K nxp
buk9k30-80e.pdf
BUK9K30-80E Dual N-channel 80 V, 30 m logic level MOSFET 12 May 2018 Product data sheet 1. General description Dual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC-Q101 ... See More ⇒
9.11. Size:316K nxp
buk9k17-60e.pdf
BUK9K17-60E Dual N-channel 60 V, 17 m logic level MOSFET 19 March 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101 Co... See More ⇒
9.12. Size:244K nxp
buk9k35-60e.pdf
BUK9K35-60E Dual N-channel 60 V, 35 m logic level MOSFET 12 November 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101... See More ⇒
9.13. Size:250K nxp
buk9k52-60e.pdf
BUK9K52-60E Dual N-channel 60 V, 55 m logic level MOSFET 24 February 2015 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101... See More ⇒
9.14. Size:288K nxp
buk9k89-100e.pdf
BUK9K89-100E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated ... See More ⇒
9.15. Size:258K nxp
buk9k22-80e.pdf
BUK9K22-80E Dual N-channel 80 V, 22 m logic level MOSFET 11 May 2018 Product data sheet 1. General description Dual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC-Q101 ... See More ⇒
9.16. Size:263K nxp
buk9k20-80e.pdf
BUK9K20-80E Dual N-channel 80 V, 20 m logic level MOSFET 11 May 2018 Product data sheet 1. General description Dual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC-Q101 ... See More ⇒
9.17. Size:314K nxp
buk9k25-40e.pdf
BUK9K25-40E Dual N-channel 40 V, 29 m logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q10... See More ⇒
Detailed specifications: BUK9K17-60E, BUK9K18-40E, BUK9K25-40E, BUK9K29-100E, BUK9K32-100E, BUK9K35-60E, BUK9K45-100E, BUK9K52-60E, 12N60, BUK9K6R8-40E, BUK9K89-100E, BUK9K8R7-40E, BUK9Y107-80E, BUK9Y113-100E, BUK9Y11-80E, BUK9Y12-100E, BUK9Y12-40E
Keywords - BUK9K6R2-40E MOSFET specs
BUK9K6R2-40E cross reference
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BUK9K6R2-40E replacement
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