BUK9Y107-80E PDF and Equivalents Search

 

BUK9Y107-80E Specs and Replacement

Type Designator: BUK9Y107-80E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 11.8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm

Package: LFPAK56 POWER-SO8

BUK9Y107-80E substitution

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BUK9Y107-80E datasheet

 ..1. Size:312K  nxp
buk9y107-80e.pdf pdf_icon

BUK9Y107-80E

BUK9Y107-80E N-channel 80 V, 107 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive... See More ⇒

 7.1. Size:805K  nxp
buk9y104-100b.pdf pdf_icon

BUK9Y107-80E

BUK9Y104-100B N-channel TrenchMOS logic level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featur... See More ⇒

 8.1. Size:89K  philips
buk9y11-30b.pdf pdf_icon

BUK9Y107-80E

BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible 1.3 ... See More ⇒

 8.2. Size:189K  philips
buk9y14-40b.pdf pdf_icon

BUK9Y107-80E

BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automoti... See More ⇒

Detailed specifications: BUK9K32-100E, BUK9K35-60E, BUK9K45-100E, BUK9K52-60E, BUK9K6R2-40E, BUK9K6R8-40E, BUK9K89-100E, BUK9K8R7-40E, AON6380, BUK9Y113-100E, BUK9Y11-80E, BUK9Y12-100E, BUK9Y12-40E, BUK9Y14-80E, BUK9Y15-100E, BUK9Y153-100E, BUK9Y15-60E

Keywords - BUK9Y107-80E MOSFET specs

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