BUK9Y3R5-40E PDF and Equivalents Search

 

BUK9Y3R5-40E Specs and Replacement

Type Designator: BUK9Y3R5-40E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36.8 nS

Cossⓘ - Output Capacitance: 487 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm

Package: LFPAK56 POWER-SO8

BUK9Y3R5-40E substitution

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BUK9Y3R5-40E datasheet

 ..1. Size:268K  nxp
buk9y3r5-40e.pdf pdf_icon

BUK9Y3R5-40E

BUK9Y3R5-40E N-channel 40 V, 3.8 m logic level MOSFET in LFPAK56 11 November 2014 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant Repe... See More ⇒

 7.1. Size:262K  nxp
buk9y3r0-40e.pdf pdf_icon

BUK9Y3R5-40E

BUK9Y3R0-40E N-channel 40 V 3.0 m logic level MOSFET in LFPAK56 11 November 2014 Product data sheet 1. General description Logic level N-channel MOSFET in LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetiti... See More ⇒

 8.1. Size:665K  nxp
buk9y30-75b.pdf pdf_icon

BUK9Y3R5-40E

BUK9Y30-75B N-channel TrenchMOS logic level FET Rev. 04 10 April 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Feature... See More ⇒

 8.2. Size:311K  nxp
buk9y38-100e.pdf pdf_icon

BUK9Y3R5-40E

BUK9Y38-100E N-channel 100 V, 38 m logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive... See More ⇒

Detailed specifications: BUK9Y19-100E, BUK9Y21-40E, BUK9Y22-100E, BUK9Y25-60E, BUK9Y25-80E, BUK9Y29-40E, BUK9Y38-100E, BUK9Y3R0-40E, SI2302, BUK9Y41-80E, BUK9Y43-60E, BUK9Y4R4-40E, BUK9Y4R8-60E, BUK9Y59-60E, BUK9Y65-100E, BUK9Y6R0-60E, BUK9Y72-80E

Keywords - BUK9Y3R5-40E MOSFET specs

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