BUK9Y65-100E MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9Y65-100E
Marking Code: 96510E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 64 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
|Id|ⓘ - Maximum Drain Current: 19 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 14 nC
trⓘ - Rise Time: 13.6 nS
Cossⓘ - Output Capacitance: 96 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0633 Ohm
Package: LFPAK56 POWER-SO8
BUK9Y65-100E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK9Y65-100E Datasheet (PDF)
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