BUZ206 Specs and Replacement

Type Designator: BUZ206

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-220AB

BUZ206 substitution

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BUZ206 datasheet

 ..1. Size:176K  siemens
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BUZ206

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 ..2. Size:228K  inchange semiconductor
buz206.pdf pdf_icon

BUZ206

isc N-Channel Mosfet Transistor BUZ206 FEATURES High speed switching Low R DS(ON) Easy driver for cost effective application Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Automotive power actuator drivers Motor controls DC-DC converters r . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-S... See More ⇒

 9.1. Size:273K  st
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BUZ206

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 9.2. Size:186K  siemens
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BUZ206

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Detailed specifications: BUZ111S, BUZ111SL, BUZ11AL, BUZ12, BUZ12A, BUZ171, BUZ201, BUZ202, IRFZ44, BUZ210, BUZ215, BUZ216, BUZ21L, BUZ22, BUZ220, BUZ221, BUZ231

Keywords - BUZ206 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs