BUZ30A
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUZ30A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 21
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 70
nS
Cossⓘ -
Output Capacitance: 280
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13
Ohm
Package:
TO-220
BUZ30A
Datasheet (PDF)
..1. Size:509K infineon
buz30a.pdf 
BUZ 30A SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 30A 200 V 21 A 0.13 PG-TO-220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 26 C 21Pulsed drain current IDpulsTC = 25 C 84Avalanche current,limited by Tjmax IAR 21Avalanche
..2. Size:229K inchange semiconductor
buz30a.pdf
isc N-Channel Mosfet Transistor BUZ30AFEATURESStatic Drain-Source On-Resistance: R = 0.13(Max)DS(on)High current capability150 operating temperatureHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSolenoid and relay driversDC-DC & DC-AC converters
0.1. Size:1428K infineon
buz30ah.pdf
BUZ 30A H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated . Halogen-free according to IEC61249-2--21Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 30A H 200 V 21 A 0.13 PG-TO-220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 26 C 21Pulsed drain current IDpulsTC = 25 C 84Aval
0.2. Size:1654K infineon
buz30ah3045a.pdf
BUZ30A H3045A . Halogen-free according to IEC61249-2-21Pb-free H3045A PG-TO263-3 Yes Rev. 2.22010-07-02BUZ30A H3045A2010-07-02Rev. 2.2BUZ30A H3045A2010-07-02Rev 2.2BUZ30A H3045A2010-07-02Rev 2.2BUZ30A H3045A2010-07-02Rev 2.2BUZ30A H3045A2010-07-02Rev 2.2BUZ30A H3045A101010.10.01Rev 2.2 2010-07-02BUZ30A H3045A2010-07-02Rev 2.2
0.3. Size:245K inchange semiconductor
buz30ah.pdf
isc N-Channel MOSFET Transistor BUZ30AHIBUZ30AHFEATURESStatic drain-source on-resistance:RDS(on) 130mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current,high speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
0.4. Size:228K inchange semiconductor
buz30ah3045a.pdf
Isc N-Channel MOSFET Transistor BUZ30AH3045AFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
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