All MOSFET. BUZ325 Datasheet

 

BUZ325 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUZ325
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO-218AA

 BUZ325 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUZ325 Datasheet (PDF)

 ..1. Size:366K  siemens
buz325.pdf

BUZ325 BUZ325

SIPMOS Power Transistor BUZ 325 N channel Enhancement mode Avalanche-rated1)Type VDS ID RDS (on) Package Ordering CodeBUZ 325 400 V 12.5 A 0.35 TO-218 AA C67078-S3118-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current, TC = 27 C ID 12.5 APulsed drain current, TC =25C ID puls 50Avalanche current, limited by Tj max IAR 12.5Avalanche energy, per

 ..2. Size:231K  inchange semiconductor
buz325.pdf

BUZ325 BUZ325

isc N-Channel Mosfet Transistor BUZ325FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc

 9.1. Size:282K  st
buz32.pdf

BUZ325 BUZ325

 9.2. Size:219K  siemens
buz326.pdf

BUZ325 BUZ325

BUZ 326SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 326 400 V 10.5 A 0.5 TO-218 AA C67078-S3112-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 27 C 10.5Pulsed drain current IDpulsTC = 25 C 42Avalanche current,limited by Tjmax

 9.3. Size:142K  siemens
buz323.pdf

BUZ325 BUZ325

BUZ 323SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 323 400 V 15 A 0.3 TO-218 AA C67078-S3127-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 15Pulsed drain current IDpulsTC = 25 C 60Avalanche current,limited by Tjmax IAR

 9.4. Size:1225K  infineon
buz32h3045a.pdf

BUZ325 BUZ325

BUZ 32 H3045A. Pb-free lead plating; RoHS compliant. Halogen-free according to IEC61249-2-21Pb-freePG-TO263-3BUZ32 H3045A YesRev. 2.2 2009-11-10BUZ 32 H3045ARev 2.2 2009-11-10BUZ 32 H3045ARev 2.2 2009-11-10BUZ 32 H3045ARev 2.22009-11-10BUZ 32 H3045A2009-11-10Rev 2.2BUZ 32 H3045A2009-11-10Rev 2.2BUZ32 H3045ARev 2.22009-11-10BUZ 32 H3045ARev

 9.5. Size:90K  infineon
buz32.pdf

BUZ325 BUZ325

BUZ 32 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 32 200 V 9.5 A 0.4 TO-220 AB C67078-S1310-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 29 C 9.5Pulsed drain current IDpulsTC = 25 C 38Avalanche current,limited by Tjmax IA

 9.6. Size:402K  infineon
buz32h.pdf

BUZ325 BUZ325

BUZ 32 H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated . Halogen-free according to IEC61249-2-21Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 32 H 200 V 9.5 A 0.4 PG-TO-220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 29 C 9.5Pulsed drain current IDpulsTC = 25 C 38Avalan

 9.7. Size:231K  inchange semiconductor
buz326.pdf

BUZ325 BUZ325

isc N-Channel Mosfet Transistor BUZ326FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc

 9.8. Size:230K  inchange semiconductor
buz32.pdf

BUZ325 BUZ325

isc N-Channel Mosfet Transistor BUZ32FEATURES9.5A, 200VRDS(ON) = 0.400SOA is Power Dissipation LimitedNanosecond Switching SpeedsLinear Transfer CharacteristicsHigh Input ImpedanceMajority Carrier DeviceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2N6788JANTX

 

 
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