BUZ355 Specs and Replacement
Type Designator: BUZ355
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-218AA
BUZ355 substitution
- MOSFET ⓘ Cross-Reference Search
BUZ355 datasheet
buz355.pdf
BUZ 355 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 355 800 V 6 A 1.5 TO-218 AA C67078-S3107-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 29 C 6 Pulsed drain current IDpuls TC = 25 C 24 Avalanche current,limited by Tjmax IAR 5.... See More ⇒
buz355 buz356.pdf
SIPMOS Power Transistors BUZ 355 BUZ 356 N channel Enhancement mode 1) Type VDS ID TC RDS (on) Package Ordering Code BUZ 355 800 V 6.0 A 29 C 1.5 TO-218 AA C67078-A3107-A2 BUZ 356 800 V 5.3 A 25 C 2.0 TO-218 AA C67078-A3108-A2 Maximum Ratings Parameter Symbol BUZ Unit 355 356 Continuous drain current ID 6.0 5.3 A Pulsed drain current, TC = 25 C ID puls 21 Drain so... See More ⇒
Detailed specifications: BUZ341, BUZ342, BUZ345, BUZ346S2, BUZ348, BUZ349, BUZ350, BUZ351, SKD502T, BUZ356, BUZ357, BUZ358, BUZ360, BUZ37, BUZ381, BUZ383, BUZ385
Keywords - BUZ355 MOSFET specs
BUZ355 cross reference
BUZ355 equivalent finder
BUZ355 pdf lookup
BUZ355 substitution
BUZ355 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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