All MOSFET. BUZ355 Datasheet

 

BUZ355 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUZ355
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-218AA

 BUZ355 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUZ355 Datasheet (PDF)

 ..1. Size:208K  siemens
 buz355.pdf

BUZ355 BUZ355

BUZ 355SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 355 800 V 6 A 1.5 TO-218 AA C67078-S3107-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 29 C 6Pulsed drain current IDpulsTC = 25 C 24Avalanche current,limited by Tjmax IAR 5.

 ..2. Size:489K  siemens
 buz355 buz356.pdf

BUZ355 BUZ355

SIPMOS Power Transistors BUZ 355BUZ 356 N channel Enhancement mode1)Type VDS ID TC RDS (on) Package Ordering CodeBUZ 355 800 V 6.0 A 29 C 1.5 TO-218 AA C67078-A3107-A2BUZ 356 800 V 5.3 A 25 C 2.0 TO-218 AA C67078-A3108-A2Maximum RatingsParameter Symbol BUZ Unit355 356Continuous drain current ID 6.0 5.3 APulsed drain current, TC = 25 C ID puls 21Drain so

 9.1. Size:280K  st
 buz354.pdf

BUZ355 BUZ355

 9.2. Size:264K  st
 buz353.pdf

BUZ355 BUZ355

 9.3. Size:182K  siemens
 buz351.pdf

BUZ355 BUZ355

 9.4. Size:207K  siemens
 buz356.pdf

BUZ355 BUZ355

BUZ 356SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 356 800 V 5.3 A 2 TO-218 AA C67078-S3108-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 5.3Pulsed drain current IDpulsTC = 25 C 21Avalanche current,limited by Tjmax IAR

 9.5. Size:68K  siemens
 buz358.pdf

BUZ355 BUZ355

BUZ 358SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 358 1000 V 4.5 A 2.6 TO-218 AA C67078-S3111-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 4.5Pulsed drain current IDpulsTC = 25 C 18Avalanche current,limited by Tjmax I

 9.6. Size:280K  siemens
 buz357.pdf

BUZ355 BUZ355

 9.7. Size:474K  siemens
 buz357 buz358.pdf

BUZ355 BUZ355

SIPMOS Power Transistors BUZ 357BUZ 358 N channel Enhancement mode Avalanche-rated1)Type VDS ID RDS (on) Package Ordering CodeBUZ 357 1000 V 5.1 A 2.0 TO-218 AA C67078-S3110-A2BUZ 358 1000 V 4.5 A 2.6 TO-218 AA C67078-S3111-A2Maximum RatingsParameter Symbol BUZ Unit357 358Continuous drain current, TC = 25 C ID 5.1 4.5 APulsed drain current, TC = 25 C ID p

 9.8. Size:106K  infineon
 buz350.pdf

BUZ355 BUZ355

BUZ 350 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 350 200 V 22 A 0.12 TO-218 AA C67078-S3117-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 33 C 22Pulsed drain current IDpulsTC = 25 C 88Avalanche current,limited by Tjmax I

 9.9. Size:223K  inchange semiconductor
 buz35.pdf

BUZ355 BUZ355

isc N-Channel Mosfet Transistor BUZ35FEATURESStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers for

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FQPF20N06L

 

 
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