BUZ357 Specs and Replacement

Type Designator: BUZ357

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO-218AA

BUZ357 substitution

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BUZ357 datasheet

 ..1. Size:280K  siemens
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BUZ357

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 ..2. Size:474K  siemens
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BUZ357

SIPMOS Power Transistors BUZ 357 BUZ 358 N channel Enhancement mode Avalanche-rated 1) Type VDS ID RDS (on) Package Ordering Code BUZ 357 1000 V 5.1 A 2.0 TO-218 AA C67078-S3110-A2 BUZ 358 1000 V 4.5 A 2.6 TO-218 AA C67078-S3111-A2 Maximum Ratings Parameter Symbol BUZ Unit 357 358 Continuous drain current, TC = 25 C ID 5.1 4.5 A Pulsed drain current, TC = 25 C ID p... See More ⇒

 9.1. Size:280K  st
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BUZ357

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 9.2. Size:264K  st
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BUZ357

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Detailed specifications: BUZ345, BUZ346S2, BUZ348, BUZ349, BUZ350, BUZ351, BUZ355, BUZ356, 13N50, BUZ358, BUZ360, BUZ37, BUZ381, BUZ383, BUZ385, BUZ40B, BUZ44A

Keywords - BUZ357 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.