All MOSFET. CHM1012PAGP Datasheet

 

CHM1012PAGP MOSFET. Datasheet pdf. Equivalent

Type Designator: CHM1012PAGP

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 120 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 47.5 nC

Rise Time (tr): 85 nS

Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm

Package: DPAK

CHM1012PAGP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CHM1012PAGP Datasheet (PDF)

1.1. chm1012pagp.pdf Size:59K _update_mosfet

CHM1012PAGP
CHM1012PAGP

CHENMKO ENTERPRISE CO.,LTD CHM1012PA SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 120 Volts CURRENT 10 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power

3.1. chm1012tgp.pdf Size:315K _update_mosfet

CHM1012PAGP
CHM1012PAGP

CHENMKO ENTERPRISE CO.,LTD CHM1012TGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 0.65 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-75/SOT-416 FEATURE * Small surface mounting type. (SC-75/SOT-416) * High density cell design for low RDS(ON). * Suitable for high packing den

3.2. chm1012lpagp.pdf Size:107K _update_mosfet

CHM1012PAGP
CHM1012PAGP

CHENMKO ENTERPRISE CO.,LTD CHM1012LPAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 120 Volts CURRENT 10 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High powe

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