CHM3U33SESGP Datasheet and Replacement
Type Designator: CHM3U33SESGP
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 0.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
tonⓘ - Turn-on Time: 14 nS
Cossⓘ - Output Capacitance: 8 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: SOT-363
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CHM3U33SESGP Datasheet (PDF)
chm3u33sesgp.pdf

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM3U33SESGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 20 Volts CURRENT 0.2 AmpereP-channel: VOLTAGE 20 Volts CURRENT 0.2 AmpereAPPLICATION* High speed switching , Analog switching SC-88/SOT-363FEATURE* Small flat package. (SC-88/SOT-363 )* Super high dense cell design for extremely low RDS(ON).* Lead free produc
chm3u22sesgp.pdf

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM3U22 ESGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 30 Volts CURRENT 0.2 AmpereP-channel: VOLTAGE 30 Volts CURRENT 0.2 AmpereAPPLICATION* High speed switching , Analog switching SC-88/SOT-363FEATURE* Small flat package. ( SOT- 63 )* Super high dense cell design for extremely low RDS(ON).* Lead free produc
chm3u22vesgp.pdf

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM3U22VESGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 30 Volts CURRENT 0.2 AmpereP-channel: VOLTAGE 30 Volts CURRENT 0.2 AmpereAPPLICATION* High speed switching , Analog switching SOT-563FEATURE* Small flat package. (SOT-563 )* Super high dense cell design for extremely low RDS(ON).* Lead free product is acquire
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: MCH3484 | DMN30H4D0L
Keywords - CHM3U33SESGP MOSFET datasheet
CHM3U33SESGP cross reference
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History: MCH3484 | DMN30H4D0L



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