CHM6503GP Datasheet and Replacement
Type Designator: CHM6503GP
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 3.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 115 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOT-346
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CHM6503GP Datasheet (PDF)
chm6503gp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM6503GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat
chm6561qgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM6561QGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.FEATURESC-74/SOT-457* Small surface mounting type. (SC-74/SOT-457)* High density cell design for low RDS(ON). * Suitable for high packing density.(1) (6)*
chm65a3pagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM65A3PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 25 Volts CURRENT 38 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: WMM11N80M3 | FDMS9620S | AM2314NE | RFP2N10L | IRFI7536G
Keywords - CHM6503GP MOSFET datasheet
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History: WMM11N80M3 | FDMS9620S | AM2314NE | RFP2N10L | IRFI7536G



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