CHM8811JGP Datasheet and Replacement
Type Designator: CHM8811JGP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 12.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 9 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: SO-8
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CHM8811JGP Datasheet (PDF)
chm8811jgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM8811JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High powe
chm8809jgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM8809JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 15.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and re
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SPD04N60S5 | FCPF7N60YDTU | DM12N65C | AP6679GI-HF | NTD4855N-1G | SM6A12NSFP
Keywords - CHM8811JGP MOSFET datasheet
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History: SPD04N60S5 | FCPF7N60YDTU | DM12N65C | AP6679GI-HF | NTD4855N-1G | SM6A12NSFP



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