CMLDM3757 Specs and Replacement
Type Designator: CMLDM3757
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.54 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ -
Output Capacitance: 25 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: SOT-563
- MOSFET ⓘ Cross-Reference Search
CMLDM3757 datasheet
..1. Size:589K central
cmldm3757.pdf 
CMLDM3757 SURFACE MOUNT www.centralsemi.com N-CHANNEL AND P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM3757 COMPLEMENTARY MOSFETS consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CO... See More ⇒
7.1. Size:586K central
cmldm3737.pdf 
CMLDM3737 SURFACE MOUNT www.centralsemi.com DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM3737 SILICON MOSFETS consists of Dual N-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CODE 7C3 FEATURES ESD Protection u... See More ⇒
9.1. Size:587K central
cmldm7585.pdf 
CMLDM7585 SURFACE MOUNT www.centralsemi.com N-CHANNEL AND P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM7585 COMPLEMENTARY MOSFETS consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CO... See More ⇒
9.2. Size:665K central
cmldm7005.pdf 
CMLDM7005 CMLDM7005R www.centralsemi.com SURFACE MOUNT DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE These CENTRAL SEMICONDUCTOR devices are SILICON MOSFET dual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. The CMLDM7005R utilizes a reverse pinout confi... See More ⇒
9.3. Size:713K central
cmldm7003t.pdf 
CMLDM7003TG SURFACE MOUNT SILICON www.centralsemi.com DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE MOSFET The CENTRAL SEMICONDUCTOR CMLDM7003TG is a dual N-Channel enhancement-mode MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This device offers low rDS(ON), low VGS(th), and ESD protection up to 2kV. MARKIN... See More ⇒
9.4. Size:456K central
cmldm8120t.pdf 
CMLDM8120TG SURFACE MOUNT SILICON www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM8120TG MOSFET is an enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and a MAX threshold voltage of 0.85V. MARKING CODE CT8 S... See More ⇒
9.5. Size:623K central
cmldm7002a cmldm7002a cmldm7002aj.pdf 
CMLDM7002A CMLDM7002AG* CMLDM7002AJ www.centralsemi.com SURFACE MOUNT DESCRIPTION DUAL N-CHANNEL These CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODE SILICON MOSFET dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7002A utilizes the USA pinout co... See More ⇒
9.6. Size:521K central
cmldm7003e cmldm7003je.pdf 
CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION www.centralsemi.com SURFACE MOUNT DESCRIPTION DUAL N-CHANNEL The CENTRAL SEMICONDUCTOR CMLDM7003E ENHANCEMENT-MODE and CMLDM7003JE are Enhancement-mode SILICON MOSFET N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003E uti... See More ⇒
9.7. Size:586K central
cmldm8005.pdf 
CMLDM8005 SURFACE MOUNT www.centralsemi.com DUAL P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM8005 SILICON MOSFETS consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CODE CC8 FEATURES ESD Protection u... See More ⇒
9.8. Size:534K central
cmldm7120 cmldm7120g.pdf 
CMLDM7120G SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM7120G SILICON MOSFET is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING CODE C7... See More ⇒
9.9. Size:518K central
cmldm8002aj cmldm8002a cmldm8002ag.pdf 
CMLDM8002A CMLDM8002AG* CMLDM8002AJ www.centralsemi.com SURFACE MOUNT DESCRIPTION DUAL P-CHANNEL These CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODE dual chip Enhancement-mode P-Channel Field Effect SILICON MOSFET Transistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM8002A utilizes the USA pin... See More ⇒
9.10. Size:518K central
cmldm7003 cmldm7003 cmldm7003j.pdf 
CMLDM7003 CMLDM7003G* CMLDM7003J www.centralsemi.com SURFACE MOUNT DESCRIPTION DUAL N-CHANNEL These CENTRAL SEMICONDUCTOR devices ENHANCEMENT-MODE are dual Enhancement-mode N-Channel Field Effect SILICON MOSFET Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003 utilizes the USA pinout confi... See More ⇒
9.11. Size:479K central
cmldm7120t.pdf 
CMLDM7120TG SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM7120TG MOSFET is an enhancement-mode N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and a MAX threshold voltage of 0.85V. MARKING CODE CT7 F... See More ⇒
9.12. Size:587K central
cmldm7484.pdf 
CMLDM7484 SURFACE MOUNT www.centralsemi.com N-CHANNEL AND P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM7484 COMPLEMENTARY MOSFETS consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CO... See More ⇒
9.13. Size:585K central
cmldm5757.pdf 
CMLDM5757 SURFACE MOUNT www.centralsemi.com DUAL P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM5757 SILICON MOSFETS consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CODE 77C FEATURES ESD Protection u... See More ⇒
9.14. Size:511K central
cmldm8120.pdf 
CMLDM8120 CMLDM8120G* www.centralsemi.com SURFACE MOUNT P-CHANNEL DESCRIPTION ENHANCEMENT-MODE These CENTRAL SEMICONDUCTOR devices SILICON MOSFET are Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING... See More ⇒
Detailed specifications: CHT-SNMOS80, CM697, CM800, CM860, CMF10120D, CMF20120D, CMKDM8005, CMLDM3737, IRF1407, CMLDM5757, CMLDM7002A, CMLDM7002AJ, CMLDM7003, CMLDM7003E, CMLDM7003J, CMLDM7003JE, CMLDM7003TG
Keywords - CMLDM3757 MOSFET specs
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