CMLDM3757 Specs and Replacement

Type Designator: CMLDM3757

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.54 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: SOT-563

CMLDM3757 substitution

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CMLDM3757 datasheet

 ..1. Size:589K  central
cmldm3757.pdf pdf_icon

CMLDM3757

CMLDM3757 SURFACE MOUNT www.centralsemi.com N-CHANNEL AND P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM3757 COMPLEMENTARY MOSFETS consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CO... See More ⇒

 7.1. Size:586K  central
cmldm3737.pdf pdf_icon

CMLDM3757

CMLDM3737 SURFACE MOUNT www.centralsemi.com DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM3737 SILICON MOSFETS consists of Dual N-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CODE 7C3 FEATURES ESD Protection u... See More ⇒

 9.1. Size:587K  central
cmldm7585.pdf pdf_icon

CMLDM3757

CMLDM7585 SURFACE MOUNT www.centralsemi.com N-CHANNEL AND P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM7585 COMPLEMENTARY MOSFETS consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CO... See More ⇒

 9.2. Size:665K  central
cmldm7005.pdf pdf_icon

CMLDM3757

CMLDM7005 CMLDM7005R www.centralsemi.com SURFACE MOUNT DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE These CENTRAL SEMICONDUCTOR devices are SILICON MOSFET dual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. The CMLDM7005R utilizes a reverse pinout confi... See More ⇒

Detailed specifications: CHT-SNMOS80, CM697, CM800, CM860, CMF10120D, CMF20120D, CMKDM8005, CMLDM3737, IRF1407, CMLDM5757, CMLDM7002A, CMLDM7002AJ, CMLDM7003, CMLDM7003E, CMLDM7003J, CMLDM7003JE, CMLDM7003TG

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