CMLDM7003TG Datasheet and Replacement
Type Designator: CMLDM7003TG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 25 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: SOT-563
CMLDM7003TG substitution
CMLDM7003TG Datasheet (PDF)
cmldm7003t.pdf
CMLDM7003TGSURFACE MOUNT SILICONwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEMOSFET The CENTRAL SEMICONDUCTOR CMLDM7003TG is a dual N-Channel enhancement-mode MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This device offers low rDS(ON), low VGS(th), and ESD protection up to 2kV.MARKIN
cmldm7003e cmldm7003je.pdf
CMLDM7003ECMLDM7003JEENHANCED SPECIFICATIONwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL N-CHANNELThe CENTRAL SEMICONDUCTOR CMLDM7003E ENHANCEMENT-MODEand CMLDM7003JE are Enhancement-mode SILICON MOSFETN-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003E uti
cmldm7003 cmldm7003 cmldm7003j.pdf
CMLDM7003CMLDM7003G*CMLDM7003Jwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL N-CHANNELThese CENTRAL SEMICONDUCTOR devices ENHANCEMENT-MODEare dual Enhancement-mode N-Channel Field Effect SILICON MOSFETTransistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003 utilizes the USA pinout confi
Datasheet: CMLDM3757 , CMLDM5757 , CMLDM7002A , CMLDM7002AJ , CMLDM7003 , CMLDM7003E , CMLDM7003J , CMLDM7003JE , 20N50 , CMLDM7005 , CMLDM7120G , CMLDM7120T , CMLDM7484 , CMLDM7585 , CMLDM8002A , CMLDM8002AG , CMLDM8002AJ .
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