CMLDM7120T MOSFET. Datasheet pdf. Equivalent
Type Designator: CMLDM7120T
Marking Code: CT7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.85 V
|Id|ⓘ - Maximum Drain Current: 1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 2.4 nC
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT-563
CMLDM7120T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CMLDM7120T Datasheet (PDF)
cmldm7120t.pdf
CMLDM7120TGSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM7120TG MOSFETis an enhancement-mode N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and a MAX threshold voltage of 0.85V.MARKING CODE: CT7F
cmldm7120 cmldm7120g.pdf
CMLDM7120GSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM7120G SILICON MOSFETis an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKING CODE: C7
cmldm7585.pdf
CMLDM7585SURFACE MOUNTwww.centralsemi.comN-CHANNEL AND P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM7585 COMPLEMENTARY MOSFETSconsists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage.MARKING CO
cmldm7005.pdf
CMLDM7005CMLDM7005Rwww.centralsemi.comSURFACE MOUNTDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThese CENTRAL SEMICONDUCTOR devices are SILICON MOSFETdual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. The CMLDM7005R utilizes a reverse pinout confi
cmldm7003t.pdf
CMLDM7003TGSURFACE MOUNT SILICONwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEMOSFET The CENTRAL SEMICONDUCTOR CMLDM7003TG is a dual N-Channel enhancement-mode MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This device offers low rDS(ON), low VGS(th), and ESD protection up to 2kV.MARKIN
cmldm7002a cmldm7002a cmldm7002aj.pdf
CMLDM7002ACMLDM7002AG*CMLDM7002AJwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL N-CHANNELThese CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODESILICON MOSFET dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7002A utilizes the USA pinout co
cmldm7003e cmldm7003je.pdf
CMLDM7003ECMLDM7003JEENHANCED SPECIFICATIONwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL N-CHANNELThe CENTRAL SEMICONDUCTOR CMLDM7003E ENHANCEMENT-MODEand CMLDM7003JE are Enhancement-mode SILICON MOSFETN-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003E uti
cmldm7003 cmldm7003 cmldm7003j.pdf
CMLDM7003CMLDM7003G*CMLDM7003Jwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL N-CHANNELThese CENTRAL SEMICONDUCTOR devices ENHANCEMENT-MODEare dual Enhancement-mode N-Channel Field Effect SILICON MOSFETTransistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003 utilizes the USA pinout confi
cmldm7484.pdf
CMLDM7484SURFACE MOUNTwww.centralsemi.comN-CHANNEL AND P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM7484 COMPLEMENTARY MOSFETSconsists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage.MARKING CO
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