CMLDM8002A
MOSFET. Datasheet pdf. Equivalent
Type Designator: CMLDM8002A
Marking Code: C08
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 0.28
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 15
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5
Ohm
Package:
SOT-563
CMLDM8002A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CMLDM8002A
Datasheet (PDF)
..1. Size:518K central
cmldm8002aj cmldm8002a cmldm8002ag.pdf
CMLDM8002ACMLDM8002AG*CMLDM8002AJwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL P-CHANNELThese CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODEdual chip Enhancement-mode P-Channel Field Effect SILICON MOSFETTransistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM8002A utilizes the USA pin
6.1. Size:586K central
cmldm8005.pdf
CMLDM8005SURFACE MOUNTwww.centralsemi.comDUAL P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM8005 SILICON MOSFETSconsists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage.MARKING CODE: CC8FEATURES: ESD Protection u
8.1. Size:456K central
cmldm8120t.pdf
CMLDM8120TGSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM8120TG MOSFETis an enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and a MAX threshold voltage of 0.85V.MARKING CODE: CT8S
8.2. Size:511K central
cmldm8120.pdf
CMLDM8120CMLDM8120G*www.centralsemi.comSURFACE MOUNTP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThese CENTRAL SEMICONDUCTOR devices SILICON MOSFETare Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage.MARKING
Datasheet: WPB4002
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