All MOSFET. CMPF4391 Datasheet

 

CMPF4391 Datasheet and Replacement


   Type Designator: CMPF4391
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
   |Id|ⓘ - Maximum Drain Current: 0.15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   tonⓘ - Turn-on Time: 15 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 30 Ohm
   Package: SOT-23
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CMPF4391 Datasheet (PDF)

 ..1. Size:328K  central
 cmpf4391 cmpf4392 cmpf4393.pdf pdf_icon

CMPF4391

CMPF4391CMPF4392CMPF4393www.centralsemi.comSURFACE MOUNTDESCRIPTION:N-CHANNEL The CENTRAL SEMICONDUCTOR CMPF4391 series SILICON JFETtypes are N-Channel Silicon Field Effect Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for switching applications.MARKING CODE: CMPF4391: 6JCMPF4392: 6KCMPF4393: 6GSOT-2

 9.1. Size:322K  central
 cmpf4416a.pdf pdf_icon

CMPF4391

CMPF4416Awww.centralsemi.comSURFACE MOUNTN-CHANNEL DESCRIPTION:SILICON JFETThe CENTRAL SEMICONDUCTOR CMPF4416A type is an epoxy molded N-Channel Silicon Junction Field Effect Transistor manufactured in an SOT-23 case, designed for VHF amplifier and mixer applications.MARKING CODE: 6BGSOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSDrain-Source Voltage VDS 35 VGate

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History: IRF740PBF | AOT20N60L | DAC015N065Z2 | HUF75339P3 | P0706BD | NCE1608N | RFD14N06L

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