CP666 Specs and Replacement
Type Designator: CP666
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO5
CP666 substitution
- MOSFET ⓘ Cross-Reference Search
CP666 datasheet
Detailed specifications: CMUDM8005, CMXDM7002A, CP640, CP643, CP650, CP651, CP664, CP665, SPP20N60C3, CS04CN10, CS100N03B4, CS1010, CS1010EA8, CS10J60A4-G, CS10N60A8HD, CS10N60F, CS10N60FA9HD
Keywords - CP666 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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