CP666 MOSFET. Datasheet pdf. Equivalent

   Type Designator: CP666
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id|ⓘ - Maximum Drain Current: 1.2 A
   Tjⓘ - Maximum Junction Temperature: 200 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO5

CP666 Transistor Equivalent Substitute - MOSFET Cross-Reference Search