All MOSFET. CS10N70A8D Datasheet

 

CS10N70A8D MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS10N70A8D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 39 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO-220AB

 CS10N70A8D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS10N70A8D Datasheet (PDF)

 ..1. Size:350K  wuxi china
 cs10n70a8d.pdf

CS10N70A8D CS10N70A8D

Silicon N-Channel Power MOSFET R CS10N70 A8D VDSS 700 V General Description ID 10 A CS10N70 A8HD, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.1. Size:2011K  jilin sino
 jcs10n70c jcs10n70b jcs10n70s jcs10n70f.pdf

CS10N70A8D CS10N70A8D

N RN-CHANNEL MOSFET JCS10N70C Package MAIN CHARACTERISTICS ID 10A VDSS 700 V Rdson-max 1.10 @Vgs=10V Qg-typ 33.6nC APPLICATIONS High frequency switch mode power supply Electronic ballasts UPS UPS FEATURE

 7.2. Size:2289K  jilin sino
 jcs10n70ch jcs10n70fh.pdf

CS10N70A8D CS10N70A8D

N R N-CHANNEL MOSFET JCS10N70H Package MAIN CHARACTERISTICS 10A I D 700 V VDSS Rdson-max 1.10 @Vgs=10V 38.0nC Qg-typ APPLICATIONS High frequency switch mode power supply Electronic ballasts UPS UPS T O-220C

 7.3. Size:348K  crhj
 cs10n70f a9d.pdf

CS10N70A8D CS10N70A8D

Silicon N-Channel Power MOSFET R CS10N70F A9D VDSS 700 V General Description ID 10 A CS10N70F A9D, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

 7.4. Size:350K  crhj
 cs10n70 a8d.pdf

CS10N70A8D CS10N70A8D

Silicon N-Channel Power MOSFET R CS10N70 A8D VDSS 700 V General Description ID 10 A CS10N70 A8HD, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.5. Size:224K  wuxi china
 cs10n70fa9d.pdf

CS10N70A8D CS10N70A8D

Silicon N-Channel Power MOSFET R CS10N70F A9D VDSS 700 V General Description ID 10 A CS10N70F A9D, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

 7.6. Size:387K  wuxi china
 cs10n70fa9r.pdf

CS10N70A8D CS10N70A8D

Silicon N-Channel Power MOSFET R CS10N70F A9R General Description VDSS 700 V CS10N70F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: AP4417GH

 

 
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