CS10N70A8D PDF Specs and Replacement
Type Designator: CS10N70A8D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 155 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO-220AB
CS10N70A8D substitution
CS10N70A8D PDF Specs
cs10n70a8d.pdf
Silicon N-Channel Power MOSFET R CS10N70 A8D VDSS 700 V General Description ID 10 A CS10N70 A8HD, the silicon N-channel Enhanced PD (TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒
jcs10n70c jcs10n70b jcs10n70s jcs10n70f.pdf
N R N-CHANNEL MOSFET JCS10N70C Package MAIN CHARACTERISTICS ID 10A VDSS 700 V Rdson-max 1.10 @Vgs=10V Qg-typ 33.6nC APPLICATIONS High frequency switch mode power supply Electronic ballasts UPS UPS FEATURE... See More ⇒
cs10n70f a9d.pdf
Silicon N-Channel Power MOSFET R CS10N70F A9D VDSS 700 V General Description ID 10 A CS10N70F A9D, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou... See More ⇒
Detailed specifications: CS1010 , CS1010EA8 , CS10J60A4-G , CS10N60A8HD , CS10N60F , CS10N60FA9HD , CS10N65A8HD , CS10N65FA9HD , CS150N03A8 , CS10N70FA9D , CS10N80A8D , CS10N80FA9D , CS110N03A3 , CS1119 , CS11P40 , CS120 , CS120A .
Keywords - CS10N70A8D MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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