All MOSFET. CS150N04A8 Datasheet

 

CS150N04A8 Datasheet and Replacement


   Type Designator: CS150N04A8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 88 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO-220AB
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CS150N04A8 Datasheet (PDF)

 ..1. Size:200K  wuxi china
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CS150N04A8

Silicon N-Channel Power MOSFET R CS150N04 A8 General Description VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc

 6.1. Size:169K  crhj
 cs150n04 a8.pdf pdf_icon

CS150N04A8

Silicon N-Channel Power MOSFET R CS150N04 A8 General Description VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc

 7.1. Size:390K  crhj
 cs150n03 a8.pdf pdf_icon

CS150N04A8

Silicon N-Channel Power MOSFET R CS150N03 A8 General Description VDSS 30 V CS150N03 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 7.2. Size:392K  wuxi china
 cs150n03a8.pdf pdf_icon

CS150N04A8

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS150N03A8 General Description VDSS 30 V CS150N03A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can b

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRFI614G | CS20N50ANH | IRLS4030 | 4420 | FRE160R | MTN2N70FP | DMNH10H028SCT

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