CS1N60F Specs and Replacement
Type Designator: CS1N60F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 17 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ -
Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: TO-220F
- MOSFET ⓘ Cross-Reference Search
CS1N60F datasheet
..1. Size:262K foshan
cs1n60f.pdf 
BRF1N60(CS1N60F) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25... See More ⇒
8.1. Size:241K can-sheng
cs1n60 to-252.pdf
ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsula... See More ⇒
8.2. Size:245K can-sheng
cs1n60 to-92.pdf
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92 Plastic-Encapsulate Transistors 1N60 MOSFET(N-Channel) FEATURES Robust High Voltage Terminrtion Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterrized for Use in Bridge Circuits MAXIMU... See More ⇒
8.3. Size:483K crhj
cs1n60 c1h.pdf
Silicon N-Channel Power MOSFET R CS1N60 C1H General Description VDSS 600 V CS1N60 C1H-BD, the silicon N-channel Enhanced ID 1.0 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒
8.4. Size:537K crhj
cs1n60 a1h.pdf
Silicon N-Channel Power MOSFET R CS1N60 A1H General Description VDSS 600 V CS1N60 A1H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒
8.5. Size:532K crhj
cs1n60 a3h.pdf
Silicon N-Channel Power MOSFET R CS1N60 A3H General Description VDSS 600 V CS1N60 A3H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒
8.6. Size:1006K crhj
cs1n60 b1r.pdf
Silicon N-Channel Power MOSFET R CS1N60 B1R General Description VDSS 600 V CS1N60 B1R, the silicon N-channel Enhanced ID 1.5 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒
8.7. Size:991K crhj
cs1n60 b3r.pdf
Silicon N-Channel Power MOSFET R CS1N60 B3R General Description VDSS 600 V CS1N60 B3R, the silicon N-channel Enhanced ID 1.5 A PD (TC=25 ) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒
8.8. Size:530K crhj
cs1n60 c3h.pdf
Silicon N-Channel Power MOSFET R CS1N60 C3H General Description VDSS 600 V CS1N60 C3H, the silicon N-channel Enhanced ID 1.0 A PD (TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒
8.9. Size:376K wuxi china
cs1n60c1hd.pdf
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS1N60 C1HD General Description VDSS 600 V CS1N60 C1HD, the silicon N-channel Enhanced ID 1.5 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor ... See More ⇒
8.10. Size:424K wuxi china
cs1n60a1h.pdf
Silicon N-Channel Power MOSFET R CS1N60 A1H General Description VDSS 600 V CS1N60 A1H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒
8.11. Size:530K wuxi china
cs1n60c3h.pdf
Silicon N-Channel Power MOSFET R CS1N60 C3H General Description VDSS 600 V CS1N60 C3H, the silicon N-channel Enhanced ID 1.0 A PD (TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒
8.12. Size:1006K wuxi china
cs1n60b1r.pdf
Silicon N-Channel Power MOSFET R CS1N60 B1R General Description VDSS 600 V CS1N60 B1R, the silicon N-channel Enhanced ID 1.5 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒
8.13. Size:483K wuxi china
cs1n60c1h.pdf
Silicon N-Channel Power MOSFET R CS1N60 C1H General Description VDSS 600 V CS1N60 C1H-BD, the silicon N-channel Enhanced ID 1.0 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒
8.14. Size:511K wuxi china
cs1n60a4h.pdf
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS1N60 A4H General Description VDSS 600 V CS1N60 A4H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor ... See More ⇒
8.15. Size:991K wuxi china
cs1n60b3r.pdf
Silicon N-Channel Power MOSFET R CS1N60 B3R General Description VDSS 600 V CS1N60 B3R, the silicon N-channel Enhanced ID 1.5 A PD (TC=25 ) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒
8.16. Size:422K wuxi china
cs1n60a3h.pdf
Silicon N-Channel Power MOSFET R CS1N60 A3H General Description VDSS 600 V CS1N60 A3H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒
Detailed specifications: CS19N40AN
, CS1N50A1
, CS1N60A1H
, CS1N60A3H
, CS1N60B1R
, CS1N60B3R
, CS1N60C1H
, CS1N60C3H
, EMB04N03H
, CS1N65A1
, CS1N65A3
, CS1N65B1
, CS1N65B3
, CS1N70A3H-G
, CS1N80
, CS1N80A1H
, CS1N80A3H
.
Keywords - CS1N60F MOSFET specs
CS1N60F cross reference
CS1N60F equivalent finder
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CS1N60F replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
