All MOSFET. CS1N65A3 Datasheet

 

CS1N65A3 Datasheet and Replacement


   Type Designator: CS1N65A3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 16 Ohm
   Package: TO-251
 

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CS1N65A3 Datasheet (PDF)

 ..1. Size:533K  wuxi china
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CS1N65A3

Silicon N-Channel Power MOSFET R CS1N65 A3 General Description VDSS 650 V CS1N65 A3, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 20 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:540K  wuxi china
 cs1n65a1.pdf pdf_icon

CS1N65A3

Silicon N-Channel Power MOSFET R CS1N65 A1 General Description VDSS 650 V CS1N65 A1, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.1. Size:540K  crhj
 cs1n65 a1.pdf pdf_icon

CS1N65A3

Silicon N-Channel Power MOSFET R CS1N65 A1 General Description VDSS 650 V CS1N65 A1, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.2. Size:546K  crhj
 cs1n65 b1.pdf pdf_icon

CS1N65A3

Silicon N-Channel Power MOSFET R CS1N65 B1 General Description VDSS 650 V CS1N65 B1, the silicon N-channel Enhanced ID 1.5 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

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Datasheet: CS1N60A1H , CS1N60A3H , CS1N60B1R , CS1N60B3R , CS1N60C1H , CS1N60C3H , CS1N60F , CS1N65A1 , 2N7002 , CS1N65B1 , CS1N65B3 , CS1N70A3H-G , CS1N80 , CS1N80A1H , CS1N80A3H , CS1N80A4H , CS20N03D .

History: 2SK3650-01SJ | AP95T07BGP

Keywords - CS1N65A3 MOSFET datasheet

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