All MOSFET. CS1N80A4H Datasheet

 

CS1N80A4H MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS1N80A4H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.7 nC
   trⓘ - Rise Time: 4.6 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm
   Package: TO-252

 CS1N80A4H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS1N80A4H Datasheet (PDF)

 ..1. Size:523K  wuxi china
 cs1n80a4h.pdf

CS1N80A4H CS1N80A4H

Silicon N-Channel Power MOSFET R CS1N80 A4H General Description VDSS 800 V CS1N80 A4H, the silicon N-channel Enhanced ID 1 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:410K  wuxi china
 cs1n80a3h.pdf

CS1N80A4H CS1N80A4H

Silicon N-Channel Power MOSFET R CS1N80 A3H General Description VDSS 800 V CS1N80 A3H, the silicon N-channel Enhanced ID 1 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 7.2. Size:536K  wuxi china
 cs1n80a1h.pdf

CS1N80A4H CS1N80A4H

Silicon N-Channel Power MOSFET R CS1N80 A1H General Description VDSS 800 V CS1N80 A1H, the silicon N-channel Enhanced ID 1 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 8.1. Size:410K  crhj
 cs1n80 a3h.pdf

CS1N80A4H CS1N80A4H

Silicon N-Channel Power MOSFET R CS1N80 A3H General Description VDSS 800 V CS1N80 A3H, the silicon N-channel Enhanced ID 1 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 8.2. Size:523K  crhj
 cs1n80 a4h.pdf

CS1N80A4H CS1N80A4H

Silicon N-Channel Power MOSFET R CS1N80 A4H General Description VDSS 800 V CS1N80 A4H, the silicon N-channel Enhanced ID 1 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.3. Size:536K  crhj
 cs1n80 a1h.pdf

CS1N80A4H CS1N80A4H

Silicon N-Channel Power MOSFET R CS1N80 A1H General Description VDSS 800 V CS1N80 A1H, the silicon N-channel Enhanced ID 1 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 8.4. Size:101K  china
 cs1n80.pdf

CS1N80A4H

CS1N80 N PD TC=25 2.1 W 0.02 W/ ID VGS=10V,TC=25 0.2 A ID VGS=10V,TC=100 0.12 A VGS 30 V Tjm +150 Tstg -55 +150 RthJC 60 /W BVDSS VGS=0V,ID=0.25mA 800 V RDS on VGS=10V,ID=0.1A 15.5 20

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: LSD55R140GT | IXFL82N60P | IRFB59N10DPBF

 

 
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