All MOSFET. CS2N65A3HY Datasheet

 

CS2N65A3HY MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS2N65A3HY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO-251

 CS2N65A3HY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS2N65A3HY Datasheet (PDF)

 ..1. Size:242K  wuxi china
 cs2n65a3hy.pdf

CS2N65A3HY CS2N65A3HY

Silicon N-Channel Power MOSFET R CS2N65 A3HY General Description VDSS 650 V CS2N65 A3HY, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 6.1. Size:235K  wuxi china
 cs2n65a3.pdf

CS2N65A3HY CS2N65A3HY

Silicon N-Channel Power MOSFET R CS2N65 A3 General Description VDSS 650 V CS2N65 A3, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

 7.1. Size:857K  blue-rocket-elect
 brcs2n65aa.pdf

CS2N65A3HY CS2N65A3HY

BRCS2N65AA Rev.A Sep.-2018 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-262 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficie

 7.2. Size:236K  wuxi china
 cs2n65a4.pdf

CS2N65A3HY CS2N65A3HY

Silicon N-Channel Power MOSFET R CS2N65 A4 General Description VDSS 650 V CS2N65 A4, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 3.9 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 7.3. Size:543K  wuxi china
 cs2n65a4hy.pdf

CS2N65A3HY CS2N65A3HY

Silicon N-Channel Power MOSFET R CS2N65 A4HY General Description VDSS 650 V CS2N65 A4HY, the silicon N-channel Enhanced ID 2 A PD(TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IXFK26N90

 

 
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