All MOSFET. CS3205B8 Datasheet

 

CS3205B8 MOSFET. Datasheet pdf. Equivalent

Type Designator: CS3205B8

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 230 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 74 nC

Rise Time (tr): 51 nS

Drain-Source Capacitance (Cd): 903 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0085 Ohm

Package: TO-220AB

CS3205B8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS3205B8 Datasheet (PDF)

0.1. cs3205b8.pdf Size:429K _wuxi_china

CS3205B8
CS3205B8

Silicon N-Channel Power MOSFET R CS3205 B8 General Description VDSS 55 V CS3205 B8, the silicon N-channel Enhanced ID 120 A PD(TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 7.6 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

8.1. jcs3205ch jcs3205sh.pdf Size:868K _1

CS3205B8
CS3205B8

N N-CHANNEL MOSFET RJCS3205H Package MAIN CHARACTERISTICS ID 110 A VDSS 55 V Rdson-max 8 m @Vgs=10V Qg-typ 78nC APPLICATIONS High efficiency switch mode power supplies UPS UPS FEATURES Low gate charge

8.2. cs3205 b8.pdf Size:308K _crhj

CS3205B8
CS3205B8

Silicon N-Channel Power MOSFET R CS3205 B8 General Description VDSS 55 V CS3205 B8, the silicon N-channel Enhanced ID 120 A PD(TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 7.6 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.3. cs3205 a8.pdf Size:427K _crhj

CS3205B8
CS3205B8

Silicon N-Channel Power MOSFET R CS3205 A8 VDSS 60 V General Description ID 120 A CS3205A8, the silicon N-channel Enhanced VDMOSFETs, PD (TC=25) 230 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 7 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

8.4. cs3205 cs5y3205.pdf Size:66K _china

CS3205B8

CS5Y3205N PD TC=25 100 W 0.8 W/ID VGS=10V,TC=25 18 AID VGS=10V,TC=100 18 AIDM 72 A VGS 20 VTjm +150 Tstg -55 +150 RthJC 1.25 /W BVDSS VGS=0V,ID=0.25mA 55 VRDS on VGS=10V,ID=18A 0.022 VGS

 8.5. cs3205a8.pdf Size:2855K _citcorp

CS3205B8
CS3205B8

CS3025A860V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220AB ESD improved capability.0.189(4.80)0.173(4.30) Low gate charge.0.409(10.50)0.378(10.10) 0.114(1.40) Low reverse transfer capacitances.0.098(1.20) 100% single pulse avalanche energy test.0.638(16.0)0.606(15.0)Marking code Mechanical dataG D S Epoxy

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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