CS3205B8 MOSFET. Datasheet pdf. Equivalent
Type Designator: CS3205B8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 74 nC
trⓘ - Rise Time: 51 nS
Cossⓘ - Output Capacitance: 903 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO-220AB
CS3205B8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS3205B8 Datasheet (PDF)
cs3205b8.pdf
Silicon N-Channel Power MOSFET RCS3205 B8 General Description VDSS 55 V CS3205 B8, the silicon N-channel Enhanced ID Silicon limited current 120 A PD(TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 7.6 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transisto
jcs3205ch jcs3205sh.pdf
N N-CHANNEL MOSFET RJCS3205H Package MAIN CHARACTERISTICS ID 110 A VDSS 55 V Rdson-max 8 m @Vgs=10V Qg-typ 78nC APPLICATIONS High efficiency switch mode power supplies UPS UPS FEATURES Low gate charge
jcs3205ch jcs3205sh.pdf
N N-CHANNEL MOSFET RJCS3205H Package MAIN CHARACTERISTICS ID 110 A VDSS 55 V Rdson-max 8 m @Vgs=10V Qg-typ 78nC APPLICATIONS High efficiency switch mode power supplies UPS UPS FEATURES Low gate charge
brcs3205ra.pdf
BRCS3205RA Rev.I Jan.-2019 DATA SHEET / Descriptions N TO-220 N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features Low On-Resistance, fast switching. / Applications DC/DC These devices are well suited for high efficiency switching DC/DC converters
cs3205 b8.pdf
Silicon N-Channel Power MOSFET R CS3205 B8 General Description VDSS 55 V CS3205 B8, the silicon N-channel Enhanced ID 120 A PD(TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 7.6 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs3205 a8.pdf
Silicon N-Channel Power MOSFET R CS3205 A8 VDSS 60 V General Description ID 120 A CS3205A8, the silicon N-channel Enhanced VDMOSFETs, PD (TC=25) 230 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 7 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
cs3205 cs5y3205.pdf
CS5Y3205N PD TC=25 100 W 0.8 W/ID VGS=10V,TC=25 18 AID VGS=10V,TC=100 18 AIDM 72 A VGS 20 VTjm +150 Tstg -55 +150 RthJC 1.25 /W BVDSS VGS=0V,ID=0.25mA 55 VRDS on VGS=10V,ID=18A 0.022 VGS
cs3205a8.pdf
CS3025A860V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220AB ESD improved capability.0.189(4.80)0.173(4.30) Low gate charge.0.409(10.50)0.378(10.10) 0.114(1.40) Low reverse transfer capacitances.0.098(1.20) 100% single pulse avalanche energy test.0.638(16.0)0.606(15.0)Marking code Mechanical dataG D S Epoxy
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
