CS3N80A3 Specs and Replacement
Type Designator: CS3N80A3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ -
Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: TO-251
- MOSFET ⓘ Cross-Reference Search
CS3N80A3 datasheet
..1. Size:618K wuxi china
cs3n80a3.pdf 
Silicon N-Channel Power MOSFET R CS3N80 A3 General Description VDSS 800 V CS3N80 A3, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25 ) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒
7.1. Size:827K wuxi china
cs3n80a8.pdf 
Silicon N-Channel Power MOSFET R CS3N80 A8 General Description VDSS 800 V CS3N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25 ) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit... See More ⇒
7.2. Size:833K wuxi china
cs3n80a4.pdf 
Silicon N-Channel Power MOSFET R CS3N80 A4 General Description VDSS 800 V CS3N80 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25 ) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒
8.2. Size:495K crhj
cs3n80 arh.pdf 
Silicon N-Channel Power MOSFET R CS3N80 ARH General Description VDSS 800 V CS3N80 ARH, the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw... See More ⇒
8.3. Size:718K crhj
cs3n80 a3.pdf 
Silicon N-Channel Power MOSFET R CS3N80 A3 General Description VDSS 800 V CS3N80 A3, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25 ) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit... See More ⇒
8.4. Size:827K crhj
cs3n80 a8.pdf 
Silicon N-Channel Power MOSFET R CS3N80 A8 General Description VDSS 800 V CS3N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25 ) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit... See More ⇒
8.5. Size:824K crhj
cs3n80f a9.pdf 
Silicon N-Channel Power MOSFET R CS3N80F A9 General Description VDSS 800 V CS3N80F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25 ) 30 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒
8.6. Size:833K crhj
cs3n80 a4.pdf 
Silicon N-Channel Power MOSFET R CS3N80 A4 General Description VDSS 800 V CS3N80 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25 ) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒
8.7. Size:3103K citcorp
cs3n80fa9.pdf 
CS3N80FA9 800V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability. 0.189(4.80) 0.173(4.40) Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) Low reverse transfer capacitances. 0.098(2.50) 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code Mechanical data G D S Epox... See More ⇒
8.8. Size:485K convert
cs3n80bf cs3n80bp cs3n80bu cs3n80bl cs3n80bk.pdf 
CS3N80BF, CS3N80BP nvert Suzhou Convert Semiconductor Co ., Ltd. CS3N80BU ,CS3N80BL,CS3N80BK 800V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking... See More ⇒
Detailed specifications: CS38N20D, CS38N30AN, CS3912, CS3N50B3HY, CS3N50B4HY, CS3N60A3, CS3N65A4H-G, CS3N70A3H-G, 10N65, CS3N80A4, CS3N80A8, CS3N80FA9, CS3N90A3H, CS3N90A4H, CS3N90A8, CS3N90FA9H, CS3R50A3
Keywords - CS3N80A3 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.