CS3N80FA9 Specs and Replacement

Type Designator: CS3N80FA9

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm

Package: TO-220F

CS3N80FA9 substitution

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CS3N80FA9 datasheet

 ..1. Size:3103K  citcorp
cs3n80fa9.pdf pdf_icon

CS3N80FA9

CS3N80FA9 800V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability. 0.189(4.80) 0.173(4.40) Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) Low reverse transfer capacitances. 0.098(2.50) 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code Mechanical data G D S Epox... See More ⇒

 7.1. Size:2081K  jilin sino
jcs3n80v jcs3n80r jcs3n80b jcs3n80s jcs3n80c jcs3n80f jcs3n80v.pdf pdf_icon

CS3N80FA9

N R N-CHANNEL MOSFET JCS3N80C Package MAIN CHARACTERISTICS ID 3.0 A VDSS 800 V Rdson-max 4.9 Vgs=10V Qg-typ 15.4nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE... See More ⇒

 7.2. Size:824K  crhj
cs3n80f a9.pdf pdf_icon

CS3N80FA9

Silicon N-Channel Power MOSFET R CS3N80F A9 General Description VDSS 800 V CS3N80F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25 ) 30 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

 8.1. Size:495K  crhj
cs3n80 arh.pdf pdf_icon

CS3N80FA9

Silicon N-Channel Power MOSFET R CS3N80 ARH General Description VDSS 800 V CS3N80 ARH, the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw... See More ⇒

Detailed specifications: CS3N50B3HY, CS3N50B4HY, CS3N60A3, CS3N65A4H-G, CS3N70A3H-G, CS3N80A3, CS3N80A4, CS3N80A8, SI2302, CS3N90A3H, CS3N90A4H, CS3N90A8, CS3N90FA9H, CS3R50A3, CS3R50FA9, CS40N06, CS4482DY

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