CS3N90FA9H Specs and Replacement

Type Designator: CS3N90FA9H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm

Package: TO-220F

CS3N90FA9H substitution

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CS3N90FA9H datasheet

 ..1. Size:622K  wuxi china
 cs3n90fa9h.pdf pdf_icon

CS3N90FA9H

Silicon N-Channel Power MOSFET R CS3N90F A9H General Description VDSS 900 V CS3N90F A9H, the silicon N-channel Enhanced VDMOSFET, ID 3 A PD(TC=25 ) 30 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 4.7 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe... See More ⇒

 7.1. Size:624K  crhj
 cs3n90f a9h.pdf pdf_icon

CS3N90FA9H

Silicon N-Channel Power MOSFET R CS3N90F A9H General Description VDSS 900 V CS3N90F A9H, the silicon N-channel Enhanced VDMOSFET, ID 3 A PD(TC=25 ) 30 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 4.7 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe... See More ⇒

 7.2. Size:688K  convert
 cs3n90f cs3n90p cs3n90b.pdf pdf_icon

CS3N90FA9H

nvert Suzhou Convert Semiconductor Co ., Ltd. CS3N90F, CS3N90P,CS3N90B 900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS3N90F TO-220F CS3N90... See More ⇒

 8.1. Size:633K  crhj
 cs3n90 a3h.pdf pdf_icon

CS3N90FA9H

Silicon N-Channel Power MOSFET R CS3N90 A3H General Description VDSS 900 V CS3N90 A3H, the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit... See More ⇒

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Detailed specifications: CS3N70A3H-G, CS3N80A3, CS3N80A4, CS3N80A8, CS3N80FA9, CS3N90A3H, CS3N90A4H, CS3N90A8, IRF520, CS3R50A3, CS3R50FA9, CS40N06, CS4482DY, CS4486, CS47N60, CS48N18, CS48N75

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