All MOSFET. CS4N60A3TDY Datasheet

 

CS4N60A3TDY MOSFET. Datasheet pdf. Equivalent

Type Designator: CS4N60A3TDY

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13 nC

Rise Time (tr): 13 nS

Drain-Source Capacitance (Cd): 50 pF

Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm

Package: TO-251

CS4N60A3TDY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CS4N60A3TDY Datasheet (PDF)

1.1. cs4n60a3tdy.pdf Size:356K _update_mosfet

CS4N60A3TDY
CS4N60A3TDY

Silicon N-Channel Power MOSFET R ○ CS4N60 A3TDY General Description: VDSS 600 V CS4N60 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

2.1. cs4n60a3hd.pdf Size:353K _update_mosfet

CS4N60A3TDY
CS4N60A3TDY

Silicon N-Channel Power MOSFET R ○ CS4N60 A3HD General Description: VDSS 600 V CS4N60 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 3.1. cs4n60a8hd.pdf Size:345K _update_mosfet

CS4N60A3TDY
CS4N60A3TDY

Silicon N-Channel Power MOSFET R ○ CS4N60 A8HD General Description: VDSS 600 V CS4N60 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

3.2. cs4n60a7hd.pdf Size:340K _update_mosfet

CS4N60A3TDY
CS4N60A3TDY

Silicon N-Channel Power MOSFET R ○ CS4N60 A7HD General Description: VDSS 600 V CS4N60 A7HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 3.3. cs4n60a4tdy.pdf Size:351K _update_mosfet

CS4N60A3TDY
CS4N60A3TDY

Silicon N-Channel Power MOSFET R ○ CS4N60 A4TDY General Description: VDSS 600 V CS4N60 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

3.4. cs4n60arrd.pdf Size:343K _update_mosfet

CS4N60A3TDY
CS4N60A3TDY

Silicon N-Channel Power MOSFET R ○ CS4N60 ARRD General Description: VDSS 600 V CS4N60 ARRD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 3.5. cs4n60a4hd.pdf Size:352K _update_mosfet

CS4N60A3TDY
CS4N60A3TDY

Silicon N-Channel Power MOSFET R ○ CS4N60 A4HD General Description: VDSS 600 V CS4N60 A4HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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