CS4N60A3TDY MOSFET. Datasheet pdf. Equivalent
Type Designator: CS4N60A3TDY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 75 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 13 nC
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 50 pF
Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm
Package: TO-251
CS4N60A3TDY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS4N60A3TDY Datasheet (PDF)
1.1. cs4n60a3tdy.pdf 
Size:356K _update_mosfet
Silicon N-Channel Power MOSFET R ○ CS4N60 A3TDY General Description： VDSS 600 V CS4N60 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
2.1. cs4n60a3hd.pdf Size:353K _update_mosfet
Silicon N-Channel Power MOSFET R ○ CS4N60 A3HD General Description： VDSS 600 V CS4N60 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
3.1. cs4n60a7hd.pdf Size:340K _update_mosfet
Silicon N-Channel Power MOSFET R ○ CS4N60 A7HD General Description： VDSS 600 V CS4N60 A7HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
3.2. cs4n60a4hd.pdf Size:352K _update_mosfet
Silicon N-Channel Power MOSFET R ○ CS4N60 A4HD General Description： VDSS 600 V CS4N60 A4HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
3.3. cs4n60a4tdy.pdf Size:351K _update_mosfet
Silicon N-Channel Power MOSFET R ○ CS4N60 A4TDY General Description： VDSS 600 V CS4N60 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
3.4. cs4n60a8hd.pdf Size:345K _update_mosfet
Silicon N-Channel Power MOSFET R ○ CS4N60 A8HD General Description： VDSS 600 V CS4N60 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
3.5. cs4n60arrd.pdf Size:343K _update_mosfet
Silicon N-Channel Power MOSFET R ○ CS4N60 ARRD General Description： VDSS 600 V CS4N60 ARRD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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