CS4N60FA9HD Specs and Replacement

Type Designator: CS4N60FA9HD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.5 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm

Package: TO-220F

CS4N60FA9HD substitution

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CS4N60FA9HD datasheet

 ..1. Size:2765K  citcorp
cs4n60fa9hd.pdf pdf_icon

CS4N60FA9HD

CS4N60FA9HD 600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability. 0.189(4.80) 0.173(4.40) Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) Low reverse transfer capacitances. 0.098(2.50) 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code Mechanical data G D S Ep... See More ⇒

 5.1. Size:344K  wuxi china
cs4n60fa9tdy.pdf pdf_icon

CS4N60FA9HD

Silicon N-Channel Power MOSFET R CS4N60F A9TDY General Description VDSS 600 V CS4N60F A9TDY, the silicon N-channel ID 4 A PD(TC=25 ) 30 W Enhanced VDMOSFETs, is obtained by the self-aligned RDS(ON)Typ 2.0 planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒

 5.2. Size:315K  wuxi china
cs4n60fa9r.pdf pdf_icon

CS4N60FA9HD

Silicon N-Channel Power MOSFET R CS4N60F A9R General Description VDSS 600 V CS4N60F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

 7.1. Size:1019K  1
jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60cb jcs4n60fb.pdf pdf_icon

CS4N60FA9HD

N R N-CHANNEL MOSFET JCS4N60B Package MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson Vgs=10V 2.4 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS ... See More ⇒

Detailed specifications: CS4N60A3HD, CS4N60A3TDY, CS4N60A4HD, CS4N60A4TDY, CS4N60A7HD, CS4N60A8HD, CS4N60ARRD, CS4N60F, AOD4184A, CS4N60FA9TDY, CS4N65A3HD, CS4N65A3HDY, CS4N65A3TDY, CS4N65A4HDY, CS4N65A4TDY, CS4N65A8HD, CS4N65F

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