All MOSFET. CS4N65A3HD Datasheet

 

CS4N65A3HD Datasheet and Replacement


   Type Designator: CS4N65A3HD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 14.5 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-251
 

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CS4N65A3HD Datasheet (PDF)

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CS4N65A3HD

Silicon N-Channel Power MOSFET R CS4N65 A3HD General Description VDSS 650 V CS4N65 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 0.1. Size:353K  wuxi china
 cs4n65a3hdy.pdf pdf_icon

CS4N65A3HD

Silicon N-Channel Power MOSFET R CS4N65 A3HDY General Description VDSS 650 V CS4N65 A3HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.2. Size:324K  wuxi china
 cs4n65a3hd1-g.pdf pdf_icon

CS4N65A3HD

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4N65 A3HD1-G General Description VDSS 650 V CS4N65 A3HD1-G, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transisto

 6.1. Size:220K  wuxi china
 cs4n65a3r.pdf pdf_icon

CS4N65A3HD

Silicon N-Channel Power MOSFET R CS4N65 A3R General Description VDSS 650 V CS4N65 A3R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

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Datasheet: CS4N60A4HD , CS4N60A4TDY , CS4N60A7HD , CS4N60A8HD , CS4N60ARRD , CS4N60F , CS4N60FA9HD , CS4N60FA9TDY , AO4468 , CS4N65A3HDY , CS4N65A3TDY , CS4N65A4HDY , CS4N65A4TDY , CS4N65A8HD , CS4N65F , CS4N70ARHD , CS4N70FA9D .

History: AOD208 | UPA2719GR

Keywords - CS4N65A3HD MOSFET datasheet

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