CS540B8
MOSFET. Datasheet pdf. Equivalent
Type Designator: CS540B8
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 33
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 48
nC
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 511
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048
Ohm
Package:
TO-220AB
CS540B8
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS540B8
Datasheet (PDF)
..1. Size:837K wuxi china
cs540b8.pdf 
Silicon N-Channel Power MOSFET R CS540 B8 General Description VDSS 100 V CS540 B8, the silicon N-channel Enhanced VDMOSFETs, is ID 33 A PD(TC=25) 150 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 43 m conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit
8.1. Size:1692K jilin sino
jcs540bt jcs540st jcs540ct jcs540ft jcs540wt.pdf
N RN-CHANNEL MOSFET JCS540T Package MAIN CHARACTERISTICS ID 33 A VDSS 100 V Rdson-max 44 m @Vgs=10V Qg-typ 37.0 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
9.1. Size:534K crhj
cs540 a4.pdf
Silicon N-Channel Power MOSFET R CS540 A4 General Description VDSS 100 V CS540 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 33 A PD(TC=25) 150 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 30 m conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
9.2. Size:523K crhj
cs540 ar.pdf
Silicon N-Channel Power MOSFET R CS540 AR General Description VDSS 100 V CS540 AR, the silicon N-channel Enhanced ID 33 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 30 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
9.3. Size:837K crhj
cs540 b8.pdf
Silicon N-Channel Power MOSFET R CS540 B8 General Description VDSS 100 V CS540 B8, the silicon N-channel Enhanced VDMOSFETs, is ID 33 A PD(TC=25) 150 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 43 m conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit
9.4. Size:527K crhj
cs540 a8.pdf
Silicon N-Channel Power MOSFET R CS540 A8 General Description VDSS 100 V CS540 A8, the silicon N-channel Enhanced ID 33 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 30 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit
9.5. Size:538K crhj
cs540 a3.pdf
Silicon N-Channel Power MOSFET R CS540 A3 General Description VDSS 100 V CS540 A3, the silicon N-channel Enhanced VDMOSFETs, ID 33 A PD(TC=25) 150 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 30 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit
9.6. Size:125K china
cs540.pdf
CS540 N PD TC=25 100 W 0.8 W/ ID VGS=10V,TC=25 28 A ID VGS=10V,TC=100 16 A IDM 92 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 1.25 /W BVDSS VGS=0V,ID=0.25mA 100 V VGS=10V,ID=17A 0.049 0.077 RD
9.7. Size:122K china
cs540n.pdf
CS540N N PD TC=25 130 W 0.87 W/ ID VGS=10V,TC=25 33 A ID VGS=10V,TC=100 23 A IDM 110 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 1.15 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=16A 0.044
9.8. Size:1082K wuxi china
cs540a8.pdf
Silicon N-Channel Power MOSFET R CS540 A8 General Description VDSS 100 V CS540 A8, the silicon N-channel Enhanced ID 33 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 30 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit
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