CS630A3H MOSFET. Datasheet pdf. Equivalent
Type Designator: CS630A3H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO-251
CS630A3H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS630A3H Datasheet (PDF)
cs630a3h.pdf
Silicon N-Channel Power MOSFET R CS630 A3H General Description VDSS 200 V CS630 A3H, the silicon N-channel Enhanced VDMOSFETs, is ID 9 A PD(TC=25) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.23 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
cs630a4h.pdf
Silicon N-Channel Power MOSFET R CS630 A4H General Description VDSS 200 V CS630 A4H, the silicon N-channel Enhanced ID 9 A PD(TC=25) 83 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.23 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
cs630a8h.pdf
Silicon N-Channel Power MOSFET R CS630 A8H General Description VDSS 200 V CS630 A8H, the silicon N-channel Enhanced ID 9 A PD(TC=25) 83 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.23 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
jcs630va jcs630ra jcs630va jcs630ba jcs630sa jcs630fa jcs630ca.pdf
N N- CHANNEL MOSFET R JCS630A MAIN CHARACTERISTICS Package ID 9.0A VDSS 200 V Rdson-max 0.4 @Vgs=10V Qg-typ 22nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
jcs630va jcs630ra jcs630ba jcs630sa jcs630ca jcs630fa.pdf
N N- CHANNEL MOSFET R JCS630A MAIN CHARACTERISTICS Package ID 9.0A VDSS 200 V Rdson-max 0.4 @Vgs=10V Qg-typ 22nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
cs630 a8h.pdf
Silicon N-Channel Power MOSFET R CS630 A8H General Description VDSS 200 V CS630 A8H, the silicon N-channel Enhanced ID 9 A PD(TC=25) 83 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.23 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
cs630 a3h.pdf
Silicon N-Channel Power MOSFET R CS630 A3H General Description VDSS 200 V CS630 A3H, the silicon N-channel Enhanced VDMOSFETs, is ID 9 A PD(TC=25) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.23 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
cs630 a4h.pdf
Silicon N-Channel Power MOSFET R CS630 A4H General Description VDSS 200 V CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is ID 9 A PD(TC=25) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.23 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
cs630f a9h.pdf
Silicon N-Channel Power MOSFET R CS630F A9H General Description VDSS 200 V CS630F A9H, the silicon N-channel Enhanced ID 9 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.23 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs630.pdf
IRF630(CS630) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)
cs630d.pdf
BRD630(CS630D) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)
cs630f.pdf
IRFS630(CS630F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)
cs630fa9h.pdf
Silicon N-Channel Power MOSFET R CS630F A9H General Description VDSS 200 V CS630F A9H, the silicon N-channel Enhanced VDMOSFETs, is ID 9 A PD(TC=25) 30 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.23 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
