CS6N60A3TY Specs and Replacement

Type Designator: CS6N60A3TY

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 74 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm

Package: TO-251

CS6N60A3TY substitution

- MOSFET ⓘ Cross-Reference Search

 

CS6N60A3TY datasheet

 ..1. Size:319K  wuxi china
 cs6n60a3ty.pdf pdf_icon

CS6N60A3TY

Silicon N-Channel Power MOSFET R CS6N60 A3TY General Description VDSS 600 V CS6N60 A3TY, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

 6.1. Size:231K  wuxi china
 cs6n60a3d.pdf pdf_icon

CS6N60A3TY

Silicon N-Channel Power MOSFET R CS6N60 A3D General Description VDSS 600 V CS6N60 A3D, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw... See More ⇒

 7.1. Size:422K  wuxi china
 cs6n60a4ty.pdf pdf_icon

CS6N60A3TY

Silicon N-Channel Power MOSFET R CS6N60 A4TY General Description VDSS 600 V CS6N60 A4TY, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

 7.2. Size:351K  wuxi china
 cs6n60a4d.pdf pdf_icon

CS6N60A3TY

Silicon N-Channel Power MOSFET R CS6N60 A4D General Description VDSS 600 V CS6N60 A4D, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒

SHOW MORE

Detailed specifications: CS6766, CS6768, CS6769, CS6790, CS6796, CS6798, CS6849, CS6849U, P60NF06, CS6N60A4D, CS6N60A4TY, CS6N60F, CS6N60FA9TY, CS6N70A3D-G, CS6N70A4D-G, CS6N70FA9D, CS6N70FB9D

Keywords - CS6N60A3TY MOSFET specs

 CS6N60A3TY cross reference

 CS6N60A3TY equivalent finder

 CS6N60A3TY pdf lookup

 CS6N60A3TY substitution

 CS6N60A3TY replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.