CS6N80ARH Specs and Replacement

Type Designator: CS6N80ARH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO-262

CS6N80ARH substitution

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CS6N80ARH datasheet

 ..1. Size:675K  wuxi china
 cs6n80arh.pdf pdf_icon

CS6N80ARH

Silicon N-Channel Power MOSFET R CS6N80 ARH General Description VDSS 800 V CS6N80 ARH, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

 6.1. Size:355K  wuxi china
 cs6n80arr-g.pdf pdf_icon

CS6N80ARH

Silicon N-Channel Power MOSFET R CS6N80 ARR-G General Description VDSS 800 V CS6N80 ARR-G, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

 7.1. Size:848K  wuxi china
 cs6n80a8.pdf pdf_icon

CS6N80ARH

Silicon N-Channel Power MOSFET R CS6N80 A8 General Description VDSS 800 V CS6N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25 ) 110 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi... See More ⇒

 8.1. Size:847K  crhj
 cs6n80f a9.pdf pdf_icon

CS6N80ARH

Silicon N-Channel Power MOSFET R CS6N80F A9 General Description VDSS 800 V CS6N80F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25 ) 45 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒

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Detailed specifications: CS6N60A4TY, CS6N60F, CS6N60FA9TY, CS6N70A3D-G, CS6N70A4D-G, CS6N70FA9D, CS6N70FB9D, CS6N80A8, IRLB3034, CS6N80FA9, CS6N90ARH-G, CS6N90FA9H, CS7000, CS7002, CS7002K, CS7218, CS7225

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