CS730A4RD MOSFET. Datasheet pdf. Equivalent
Type Designator: CS730A4RD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14.5 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 68 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-252
CS730A4RD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS730A4RD Datasheet (PDF)
cs730a4rd.pdf
Silicon N-Channel Power MOSFET R CS730 A4RD General Description VDSS 400 V ID 6 A CS730 A4RD, the silicon N-channel Enhanced PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
cs730a8rd.pdf
Silicon N-Channel Power MOSFET R CS730 A8RD General Description VDSS 400 V ID 6 A CS730 A8RD, the silicon N-channel Enhanced PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.75 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs730a3rd.pdf
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS730 A3RD General Description VDSS 400 V ID 6 A CS730 A3RD, the silicon N-channel Enhanced PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can
jcs730vc jcs730rc jcs730sc jcs730bc jcs730cc jcs730fc.pdf
N RN-CHANNEL MOSFET JCS730C MAIN CHARACTERISTICS Package ID 5.5 A VDSS 400 V Rdson-max 1.0 @Vgs=10V Qg-typ 14 nC APPLICATIONS High frequency switching mode power supply LED Electronic ballast LED power supply
jcs730v jcs730r jcs730b jcs730s jcs730c jcs730f.pdf
N RN-CHANNEL MOSFET JCS730 MAIN CHARACTERISTICS Package ID 5.5 A VDSS 400 V 1.0 RdsonVgs=10V Qg 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES
cs730f a9rd.pdf
Silicon N-Channel Power MOSFET R CS730F A9RD General Description VDSS 400 V ID 6 A CS730F A9RD, the silicon N-channel Enhanced PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs730 a8rd.pdf
Silicon N-Channel Power MOSFET R CS730 A8RD General Description VDSS 400 V ID 6 A CS730 A8RD, the silicon N-channel Enhanced PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.75 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs730 a4rd.pdf
Silicon N-Channel Power MOSFET R CS730 A4RD General Description VDSS 400 V ID 6 A CS730 A4RD, the silicon N-channel Enhanced PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
cs730 a3rd.pdf
Silicon N-Channel Power MOSFET R CS730 A3RD General Description VDSS 400 V ID 6 A CS730 A3RD, the silicon N-channel Enhanced PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs730 a8h.pdf
Silicon N-Channel Power MOSFET R CS730 A8H General Description VDSS 400 V ID 6 A CS730 A8H, the silicon N-channel Enhanced PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.8 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit
cs730f a9h.pdf
Silicon N-Channel Power MOSFET R CS730F A9H General Description VDSS 400 V ID 6 A CS730F A9H, the silicon N-channel Enhanced PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs730f.pdf
IRFS730(CS730F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)
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