All MOSFET. CS75N75 Datasheet

 

CS75N75 MOSFET. Datasheet pdf. Equivalent

Type Designator: CS75N75

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 220 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm

Package: TO-254

CS75N75 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS75N75 Datasheet (PDF)

1.1. cs75n75b8h.pdf Size:843K _update_mosfet

CS75N75
CS75N75

Silicon N-Channel Power MOSFET R ○ CS75N75 B8H General Description: VDSS 75 V CS75N75 B8H, the silicon N-channel Enhanced ID 100 A PD(TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 10.2 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.2. cs75n75.pdf Size:63K _update_mosfet

CS75N75

CS75N75型N沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 220 W 线性降低系数 1.4 W/℃ ID (VGS=10V,TC=25℃) 75 A 极 ID (VGS=10V,TC=100℃) 56 A 限 IDM 300 A 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 0.8 ℃/W 性 BVDSS VGS=0V,ID=0.25mA 75 V RDS on) VGS=10V,ID=48A 0.0125 0.015 Ω (

 1.3. cs75n75 b8h.pdf Size:843K _crhj

CS75N75
CS75N75

Silicon N-Channel Power MOSFET R ○ CS75N75 B8H General Description: VDSS 75 V CS75N75 B8H, the silicon N-channel Enhanced ID 100 A PD(TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 10.2 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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