CS7N65A3TDY MOSFET. Datasheet pdf. Equivalent
Type Designator: CS7N65A3TDY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 95 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 24 nC
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 93 pF
Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
Package: TO-251
CS7N65A3TDY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS7N65A3TDY Datasheet (PDF)
0.1. cs7n65a3tdy.pdf Size:644K _wuxi_china
Silicon N-Channel Power MOSFET R ○ CS7N65 A3TDY General Description: VDSS 650 V CS7N65 A3TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
7.1. cs7n65a4tdy.pdf Size:759K _wuxi_china
Silicon N-Channel Power MOSFET R ○ CS7N65 A4TDY General Description: VDSS 650 V CS7N65 A4TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
7.2. cs7n65a0d.pdf Size:760K _wuxi_china
Silicon N-Channel Power MOSFET R ○ CS7N65 A0D General Description: VDSS 650 V CS7N65 A0D, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.98 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
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