CS840F MOSFET. Datasheet pdf. Equivalent
Type Designator: CS840F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-220F
CS840F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS840F Datasheet (PDF)
cs840f a9h.pdf
Silicon N-Channel Power MOSFET R CS840F A9H General Description VDSS 500 V CS840F A9H, the silicon N-channel Enhanced ID 8 A PD (TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs840f a9d.pdf
Silicon N-Channel Power MOSFET R CS840F A9D General Description VDSS 500 V CS840F A9D, the silicon N-channel Enhanced ID 7 A PD(TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
cs840f.pdf
IRFS840(CS840F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)
cs840fa9d.pdf
Silicon N-Channel Power MOSFET R CS840F A9D General Description VDSS 500 V CS840F A9D, the silicon N-channel Enhanced ID 7 A PD(TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
cs840fa9h.pdf
Silicon N-Channel Power MOSFET R CS840F A9H General Description VDSS 500 V CS840F A9H, the silicon N-channel Enhanced ID 8 A PD (TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs840 a8h.pdf
Silicon N-Channel Power MOSFET R CS840 A8H General Description VDSS 500 V CS840 A8H, the silicon N-channel Enhanced VDMOSFETs, ID 8 A PD (TC=25) 110 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.57 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs840 a8d.pdf
Silicon N-Channel Power MOSFET R CS840 A8D General Description VDSS 500 V CS840 A8D, the silicon N-channel Enhanced ID 7 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.68 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs840.pdf
IRF840(CS840) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)
cs840a8h.pdf
Silicon N-Channel Power MOSFET R CS840 A8H General Description VDSS 500 V CS840 A8H, the silicon N-channel Enhanced VDMOSFETs, ID 8 A PD (TC=25) 110 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.57 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs840a8d.pdf
Silicon N-Channel Power MOSFET R CS840 A8D General Description VDSS 500 V CS840 A8D, the silicon N-channel Enhanced ID 7 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.68 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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